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  rg-59 Datasheet PDF File

For rg-59 Found Datasheets File :: 3820    Search Time::2.25ms    
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    2SA1034 2SA1035 2SC2406 2SC2405

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1034 2SA1035 2SC2406 2SC2405
OCR Text ...CE = -10V, IC = -1mA, GV = 80dB Rg = 100k, Function = FLAT *2 min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 V max -100 -1 0.16 -0.06 +0.1 0.4 -0.05 +0.1 s Absolute Maximum Ratings 1.90.2 Low noise voltage...
Description Silicon PNP epitaxial planer type

File Size 50.24K  /  3 Page

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    2SB709A 2SD601A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB709A 2SD601A
OCR Text ...tor NF -- IE 6 VCB=-5V f=1kHz Rg=2k Ta=25C 20 18 16 VCB=-5V Rg=50k Ta=25C 2SB709A NF -- IE 300 hfe 100 h Parameter -- IE 5 Noise figure NF (dB) Noise figure NF (dB) h Parameter 4 14 12 10 8 6 4 2 10kHz hie (k) VC...
Description Silicon PNP epitaxial planer type

File Size 47.56K  /  3 Page

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    2SB792 2SB792A 2SD814 2SA1310 2SB0792A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB792 2SB792A 2SD814 2SA1310 2SB0792A
OCR Text ...E = -10V, IC = -1mA, GV = 80dB, Rg = 100k, Function = FLAT 200 4 150 -150 -185 -5 130 130 450 330 -1 V MHz pF mV min typ max -1 Unit A V V Emitter to base voltage Forward current transfer ratio 2SB792 2SB792A Collector to emitter satu...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 36.47K  /  2 Page

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    2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662

ROHM[Rohm]
Part No. 2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662
OCR Text ... = 6V , IC = 2mA , f = 500MHz , Rg = 50 2/2
Description High-Frequency Amplifier Transistor(11V 50mA 3.2GHz)
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)

File Size 61.54K  /  2 Page

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    2SD1149

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1149
OCR Text ...0V GV=80dB Function=FLAT Ta=25C Rg=100k 60 22k 40 5k 100 NV -- VCE Collector output capacitance Cob (pF) Rg=100k 5 Noise voltage NV (mV) 4 Noise voltage NV (mV) 80 80 60 22k 3 40 2 5k 1 20 ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.00K  /  2 Page

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    2SD601A 2SD0601 2SD0601A 2SB709A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD601A 2SD0601 2SD0601A 2SB709A
OCR Text ... VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT VCB = 10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 s Absolute Maximum Ratings max 0.1 100 0.16 -0.06 +0.1 Unit A A V V V 60 50 7 160...
Description    Silicon NPN epitaxial planer type

File Size 37.72K  /  2 Page

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    2SD814 2SD814A 2SD0814

PANASONIC[Panasonic Semiconductor]
Part No. 2SD814 2SD814A 2SD0814
OCR Text ... VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT 150 2.3 150 150 185 5 90 330 1 V MHz pF mV min typ max 1 Unit A V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition freq...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

File Size 36.51K  /  2 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...A, VCC = 480V 91 140 VGE = 15V, RG = 10 0.56 -- Energy losses include "tail" 0.28 -- mJ and diode reverse recovery 0.84 1.1 See Fig. 9,10, 1...59 0.00 12 10 8 6 4 2 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. F...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...- VDD = 30V --- ID = 50A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1180320 mJ IAS...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...- VDD = 30V --- ID = 50A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1180320 mJ IAS...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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