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						|  |  |  | TOSHIBA 
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						| Part No. | TK13A55DA 
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						| OCR Text | ...  ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1  as test circuit wave form  i ar   b vdss   v dd  v ds ? 15   v 15   v     e as  ? t ch   channel temperature (initial)    t ch   (c)    avalanche energy  e as   (mj)    r th  ? t w   pul... |  
						| Description | Power MOSFET (N-ch 500V<vdss≤700V) 
 
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						| File Size | 248.17K  / 
						6 Page | 
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						|  |  |  | New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
 New Jersey Semiconductors
 New Jersey Semi-Conduct...
 
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						| Part No. | IRF520 MTP10N10 MTP10N08 IRF522 IRF522R IRF123 IRF120 IRF121 IRF523 IRF521 
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						| OCR Text | ...irf522 irf523 mtp10n08 mtp10n10 vdss 100 v 60 v 100 v 60 v 100 v 60 v 100 v 60 v 80 v 100 v ros(on) 0.30 n 0.30 n 0.40 n 0.40 n 0.30 n 0.30 n o.4o n 0.40 ji 0.33 fi 0.33 n id at tc = 25c 8.0 a 8.0 a 7.0 a 7.0 a 8.0 a 8.0 a 7.0 a 7.0 a 10 a ... |  
						| Description | IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs N-Channel Power MOSFETs, 11 A, 60-100 V
 Trans MOSFET N-CH 100V 7A 3-Pin(3 Tab) TO-220AB
 
 
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						| File Size | 794.45K  / 
						3 Page | 
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						|  |  |  | TOSHIBA 
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						| Part No. | TK80X04K3 
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						| OCR Text | ...  ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1  as test circuit wave form  i ar   b vdss   v dd  v ds   0   v 15   v       safe operating area  drain-source voltage  v ds    (v)    drain current  i d    (a)   i d  max (continuous)  i ... |  
						| Description | Power MOSFET (N-ch single 30V<vdss≤60V) 
 
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						| File Size | 204.64K  / 
						6 Page | 
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						|  |  |  | TOSHIBA 
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						| Part No. | TK13A50DA 
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						| OCR Text | ...gle pulse   ?15 v 15 v i ar   b vdss   v dd  v ds   r g  = 25   v dd  = 90 v, l =  4.53 mh  ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1  as     r th  ? t w     e as  ? t ch   normalized transient thermal  impedance  r th (t) /r th (c... |  
						| Description | Power MOSFET (N-ch 500V<vdss≤700V) 
 
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						| File Size | 173.02K  / 
						6 Page | 
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						|  |  |  | TOSHIBA 
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						| Part No. | TK10A55D 
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						| OCR Text | ...  ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1  as test circuit wave form  i ar   b vdss   v dd  v ds   ? 15   v 15   v     e as  ? t ch   channel temperature (initial)    t ch   (c)    avalanche energy  e as   (mj)    r th  ? t w   p... |  
						| Description | Power MOSFET (N-ch 500V<vdss≤700V) 
 
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						| File Size | 185.70K  / 
						6 Page | 
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						|  |  |  | New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
 
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						| Part No. | MTM40N20 
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						| OCR Text | ...torage temperature range symbol vdss vdgr vgs vgsm id idm pd tj, tstg valua 200 200 *20 40 40 200 250 2 -65 to 150 unit vdc vdc vdc vpk adc wans w/c c thermal characteristics thermal resistance ? junction to case ? junction to ambient maxim... |  
						| Description | Power Field Effect Transistor 
 
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						| File Size | 90.69K  / 
						2 Page | 
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						|  |  |  | TOSHIBA 
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						| Part No. | TK70X06K3 
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						| OCR Text | ...  ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1  as test circuit waveform  i ar   b vdss   v dd  v ds   0   v 15   v       safe operating area  drain-source voltage  v ds    (v)    drain current  i d    (a)   i d  max (continuous)  i d... |  
						| Description | Power MOSFET (N-ch single 30V<vdss≤60V) 
 
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						| File Size | 209.55K  / 
						6 Page | 
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						|  |  |  | TOSHIBA 
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						| Part No. | TK12J55D 
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						| OCR Text | ...  ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1  as test circuit wave form  i ar   b vdss   v dd  v ds ? 15   v 15   v     e as  ? t ch   channel temperature (initial)    t ch   (c)    avalanche energy  e as   (mj)    r th  ? t w   pul... |  
						| Description | Power MOSFET (N-ch 500V<vdss≤700V) 
 
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						| File Size | 182.61K  / 
						6 Page | 
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						it Online |  Download Datasheet
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