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  vdss Datasheet PDF File

For vdss Found Datasheets File :: 18484    Search Time::1.657ms    
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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ...igh speed power switching l vdss 150V RDS(on) max 0.045 ID 41A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Ava...
Description Power MOSFET(vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(vdss=150V, Rds(on)max=0.045ohm, Id=41A)

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...sses l Fully Avalanche Rated vdss 30V RDS(on) max 2.8m ID 210A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...704L HEXFET(R) Power MOSFET vdss 20V RDS(on) max 9.0m ID 77A High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l l Very Low RDS(on) Fully Characterized Avalanche Voltage a...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

File Size 123.62K  /  10 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...cessor Power Benefits l l l vdss 20V RDS(on) max 8.5m ID 77A Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRF3706 D2Pak IRF3706S TO-262 IRF3706L ...
Description Power MOSFET(vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...707L HEXFET(R) Power MOSFET vdss 30V RDS(on) max 12.5m ID 62A High Frequency Buck Converters for Computer Processor Power Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage ...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

File Size 141.65K  /  10 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...for Computer Processor Power vdss 30V RDS(on) max 12m ID 62A l Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRF3708 D2Pak IRF3708S TO-...
Description Power MOSFET(vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(vdss=30V/ Rds(on)max=12mohm/ Id=62A)

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...709L HEXFET(R) Power MOSFET vdss 30V RDS(on) max 9.0m ID 90A TO-220AB IRF3709 D2Pak IRF3709S TO-262 IRF3709L Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drai...
Description Power MOSFET(vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...g Fully Avalanche Rated D vdss = 100V RDS(on) = 0.025 G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene...
Description Power MOSFET(vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...g Fully Avalanche Rated D vdss = 100V RDS(on) = 23m G S ID = 57A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil...
Description Power MOSFET(vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...711L HEXFET(R) Power MOSFET vdss 20V RDS(on) max 6.0m ID 110A TO-220AB IRF3711 D2Pak IRF3711S TO-262 IRF3711L Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Dra...
Description Power MOSFET(vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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