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  pep Datasheet PDF File

For pep Found Datasheets File :: 1342    Search Time::1.219ms    
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    0906-2

Freescale Semiconductor, Inc
Part No. 0906-2
OCR Text ...00 p out , output power (watts) pep g ps , power gain (db) 20 22 825 ma 550 ma figure 6. third order intermodulation distortion versus output power ?10 1 100 ?20 ?30 ?40 300 ?50 10 p out , output power (watts) pep intermodulation distortion...
Description N-Channel Enhancement-Mode Lateral MOSFETs

File Size 523.47K  /  15 Page

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    PTFA191001E PTFA191001F

Infineon Technologies AG
Part No. PTFA191001E PTFA191001F
OCR Text ...36 38 40 42 44 46 output power, pep (dbm) 3rd order imd (dbc) 900 ma 800 ma 1.0 a 1.1 a typical performance (data taken in a production test fixture) ordering information type and version package type package description marking ptfa191001...
Description Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz

File Size 248.28K  /  11 Page

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    ATC100B9R1CT500XT MCGPR63V477M13X26-RH ATC100B0R7BT500XT ATC100B101JT500XT ATC100B1R8BT500XT ATC100B2R2JT500XT ATC100B6R

Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
Part No. ATC100B9R1CT500XT MCGPR63V477M13X26-RH ATC100B0R7BT500XT ATC100B101JT500XT ATC100B1R8BT500XT ATC100B2R2JT500XT ATC100B6R2BT500XT T491D476K016AS CRCW120610KOJNEA CRCW120610ROJNEA ATC100B7R5CT500XT C3225X7R2A225KT CRCW120610RJ ATC100B3R0CT500XT GRM55DR61H106KA88L ATC100B430JT500XT MRF6V3090NBR5 MRF6V3090NR1 MRF6V3090NR5 T491X226K035AT
OCR Text ...er p out , output power (watts) pep v dd =50vdc,i dq = 350 ma, f1 = 854 mhz f2 = 860 mhz, two--tone measurements 3rd order -- 2 0 -- 3 0 -- 4 0 imd, intermodulatio n distortion (dbc) -- 6 0 5th order 1 -- 5 0 figure 10. intermodulation dist...
Description RF Power LDMOS Transistors
   RF Power LDMOS Transistors

File Size 940.66K  /  19 Page

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    MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3
OCR Text ...0 Pout, OUTPUT POWER (WATTS) pep Pout, OUTPUT POWER (WATTS) pep Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) ...
Description RF POWER FIELD EFFECT TRANSISTORS

File Size 553.35K  /  12 Page

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    MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
Part No. MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3
OCR Text ...Gain (VDD = 28 Vdc, Pout = 45 W pep, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W pep, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 =...
Description RF Power Field Effect Transistors S BAND, Si, N-CHANNEL, RF POWER, MOSFET
2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFET

File Size 546.66K  /  12 Page

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    NEL2004F02-24

NEC[NEC]
Part No. NEL2004F02-24
OCR Text ... f = 1.97 GHz, f = 100 kHz, 5 W pep, VCC = 24 V, Iq = 40 mA, CLASS AB MIN. 5 TYP. 7 MAX. UNIT W Collector Efficiency c GL 40 46 % Linear Gain 9.5 dB 3rd Order Intermodulation IM3 -34 dBc CLASS A OPERA...
Description NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

File Size 87.20K  /  12 Page

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    FREESCALE SEMICONDUCTOR INC
Motorola
Part No. MRF897RD MRF897R
OCR Text ...ency = 30% @ 900 mhz, 30 watts (pep) maximum intermodulation distortion C30 dbc @ 30 watts (pep) ? characterized with series equivalent largeCsignal parameters from 800 to 960 mhz ? silicon nitride passivated ? 100% tested for load mismatch...
Description 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
MRF897R 900 MHz, 30 W, 24 V RF Power Transistor - Archived

File Size 374.46K  /  8 Page

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    FREESCALE SEMICONDUCTOR INC
Motorola
Part No. MRF897D MRF897
OCR Text ...ency = 30% @ 900 mhz, 30 watts (pep) maximum intermodulation distortion C30 dbc @ 30 watts (pep) ? characterized with series equivalent largeCsignal parameters from 800 to 960 mhz ? silicon nitride passivated ? 100% tested for load mismatch...
Description 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
MRF897 900 MHz, 30 W, 24 V RF Power Transistor - Archived

File Size 342.38K  /  6 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF7S38010HSR3
OCR Text ...andwidth video bandwidth @ 12 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 20 ? mhz gain flatness in 200 mhz bandwidth @ p out = 2 w av...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外

File Size 518.69K  /  15 Page

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    NEL200101-24

NEC Corp.
NEC[NEC]
Part No. NEL200101-24
OCR Text ... f = 1.97 GHz, f = 100 kHz, 2 W pep, VCC = 24 V, Iq = 20 mA, CLASS AB MIN. TYP. 2.5 MAX. UNIT W Collector Efficiency c GL 54 % Linear Gain 8.8 dB 3rd Order Intermodulation IM3 -33 dBc CLASS A OPERATION ...
Description NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

File Size 86.41K  /  12 Page

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For pep Found Datasheets File :: 1342    Search Time::1.219ms    
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