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飞思卡尔半导体(中国)有限公司
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| Part No. |
MW6IC2015GNBR1
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| OCR Text |
...q2 = 170 ma, p out = 15 watts pep, full frequency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 26 db power added efficiency ? 28% imd ? - 30 dbc driver application ? typical gsm edge performance: v dd = 26 volts, i dq1 = 130 ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
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| File Size |
1,126.00K /
28 Page |
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Kingbright, Corp.
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| Part No. |
PH1819-15N
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| OCR Text |
... typ 3rd imd at 15 watts pep class a: +48 dbm typ 3rd order lnrercept point . common emitter configuration internal input impedance matching diffused emitter ballasting gold metallization system power gain g... |
| Description |
Wireless Bipolar Power Transistor, 15W . 1.78 - 1.90 GHz 无线双极功率晶体管，安永1.78 - 1.90千兆
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| File Size |
227.92K /
3 Page |
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Freescale (Motorola)
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| Part No. |
MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3
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| OCR Text |
...ma p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing 1050 ma 850 ma 1250 ma 15 14 13 12 10 100 ... |
| Description |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
562.24K /
12 Page |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF9045LR1
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| OCR Text |
...8 volts output power ? 45 watts pep power gain ? 18.8 db efficiency ? 42% imd ? ? 32 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 945 mhz, 45 watts cw ... |
| Description |
RF Power Field Effect Transistors
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| File Size |
219.86K /
8 Page |
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Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060MBR1
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| OCR Text |
...ma p out , output power (watts) pep 21 19 10 g ps , power gain (db) 22 20 550 ma 450 ma 1 300 v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two ?tone measurements, 100 khz tone spacing figure 6. third order intermodulation distortion versus ... |
| Description |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
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| File Size |
530.35K /
16 Page |
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it Online |
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http://
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| Part No. |
MW6IC1940NBR1
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| OCR Text |
...2000 mhz video bandwidth @ 40 w pep p out whereim3=--30dbc (tone spacing from 100 khz to vbw) ? imd3 = imd3 @ vbw frequency -- imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 30 ? mhz quiescent current accuracy over temperature with 18 k ? gat... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
835.17K /
17 Page |
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NXP Semiconductors N.V.
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| Part No. |
BLF4G10S-120
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| OCR Text |
...1.5 - 2-tone 861 to 961 28 120 (pep) 19 46 - - - - 31 caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
9397 750 14549 ? koninklijke philips electronics n.v. ... |
| Description |
UHF power LDMOS transistor
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| File Size |
103.30K /
14 Page |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF5S21100HR3 MRF5S21100HSR3
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| OCR Text |
...ma p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing 1050 ma 850 ma 1250 ma 15 14 13 12 10 100 ... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
375.20K /
12 Page |
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it Online |
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