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						|  |  |  | Toshiba, Corp. 
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						| Part No. | 2SK3561 
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						| OCR Text | ...est circuit wave form  i ar   b vdss   v dd  v ds   r g   =  25  ?  v dd   =  90 v, l  =  8.3mh  ? ? ? ? ? ? ? ? ? ? ? ? = v dd b vdss b vdss 2 i l 2 1  as 500 400 300 200 100 0 25  50  75  100 125 150      0.01 1  0.1 1 10 100 10 1000 100 ... |  
						| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI) 东芝场效应晶体管频道马鞍山类型(MOSVI 
 
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						| File Size | 224.84K  / 
						6 Page | 
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						|  |  |  | IXYS[IXYS Corporation] 
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						| Part No. | IXTK120N25P 
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						| OCR Text | vdss = 250 V ID25 = 120 A RDS(on)  24 m 
Symbol vdss VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M Continuous Transient TC = 25 C Ex... |  
						| Description | PolarHT Power MOSFET 
 
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						| File Size | 154.55K  / 
						5 Page | 
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