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  charge-transfer Datasheet PDF File

For charge-transfer Found Datasheets File :: 57496    Search Time::3.516ms    
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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOTF450L
OCR Text ...0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =160v, i d =5.8a gate source charge turn-on rise time gate drain charge maximum body-...transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 r ds(on) (...
Description 200V, 5.8A N-Channel MOSFET

File Size 503.16K  /  5 Page

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    AOT22N50 AOTF22N50

Alpha & Omega Semiconductors
Part No. AOT22N50 AOTF22N50
OCR Text ...0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =400v, i d =22a turn-on rise time gate source charge gate drain charge switching para...transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 0.1 0.2 0.3 0.4 0 5 10 15 20 25 r ...
Description 500V,22A N-Channel MOSFET

File Size 531.42K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT20N60
OCR Text ...0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =480v, i d =20a dynamic parameters electrical characteristics (t j =25c unless otherw...transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i ...
Description 600V,20A N-Channel MOSFET

File Size 599.74K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO5600E
OCR Text ...xcellent r ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications.ao5600e and ao56...transfer capacitance dynamic parameters a: the value of r ja is measured with the device in a sti...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 1,451.08K  /  9 Page

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    5LN01S

Sanyo Semicon Device
Part No. 5LN01S
OCR Text ...ons min typ max unit total gate charge qg v ds =10v, v gs =10v, i d =100ma 1.57 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =100m...transfer admittance, ? yfs ? -- s diode forward voltage, v sd -- v source current, i s -- a...
Description General-Purpose Switching Device Applications

File Size 33.21K  /  4 Page

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    5LN01SS 5LN01SS06

Sanyo Semicon Device
Part No. 5LN01SS 5LN01SS06
OCR Text ...ons min typ max unit total gate charge qg v ds =10v, v gs =10v, i d =100ma 1.57 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =100m...transfer admittance, ? yfs ? -- s ? yfs ? -- i d v ds =10v it00060 it00061 ta= --25 c 25 c ...
Description General-Purpose Switching Device Applications

File Size 69.84K  /  4 Page

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    Taiwan Semiconductor Company
Part No. TSM7N65
OCR Text ...on) 1.2 ? (max.) low gate charge typical @ 32nc (typ.) low crss typical @ 25pf (typ.) fast switching ordering information ...transfer conductance v ds = 8v, i d = 1a g fs -- 3.7 -- s diode forward voltage i s = 6a, ...
Description 650V N-Channel Power MOSFET

File Size 422.21K  /  9 Page

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    J629

Sanyo Semicon Device
Part No. J629
OCR Text ...ons min typ max unit total gate charge qg v ds =--6v, v gs =--4.5v, i d =--4.5a 6.5 nc gate-to-source charge qgs v ds =--6v, v gs =--4.5v, i...transfer admittance, ? yfs ? -- s diode forward voltage, v sd -- v source current, i s -- ...
Description Search --To 2SJ629

File Size 112.23K  /  4 Page

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    Renesas
Part No. H5N5015P
OCR Text ...speed switching ? low gate charge ? built-in fast recovery diode outline to?3p 1 2 3 d s g 1. gate 2. drain (flange) 3. source ...transfer admittance |y fs | 16 26 ? s i d = 15 a, v ds = 10 v note4 input capacitance ciss...
Description Transistors>Switching/MOSFETs

File Size 109.90K  /  12 Page

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    FDG6301N09 FDG6301N-F085

Fairchild Semiconductor
Part No. FDG6301N09 FDG6301N-F085
OCR Text ...ll time 3.2 7 ns q g total gate charge v ds = 5 v, i d = 0.22 a, v gs = 4.5 v 0.29 0.4 nc q gs gate-source charge 0.12 nc q gd gate-dra...transfer characteristics. figure 4 . on-resistance variation with gate-t o -s...
Description Dual N-Channel, Digital FET

File Size 359.43K  /  5 Page

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