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charge-transfer Datasheet PDF File

For charge-transfer Found Datasheets File :: 45787 Search Time::2.796ms
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				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2764-01R
OCR Text	... Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off)...Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] RDS(ON) [] ...
Description	N-channel MOS-FET
File Size	292.33K / 2 Page	View it Online	Download Datasheet

				http:// VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
Part No.	71061 SI4831DY
OCR Text	... Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Sourc...Transfer Characteristics 16 I D - Drain Current (A) 16 I D - Drain Current (A) 12 4V 8 1...
Description	P-Channel 30-V (D-S) MOSFET with Schottky Diode
File Size	67.11K / 6 Page	View it Online	Download Datasheet

				ETC ANACHIP[Anachip Corp]
Part No.	AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text	... Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 3) Rise Time Turn-O...Transfer Capacitance Test Conditions VGS=0V, ID=-250uA Reference to 25oC, ID=-1mA VGS=-10V, ID=-8A V...
Description	P-Channel 30-V (D-S) MOSFET P-Channel Enhancement Mode Power MOSFET
File Size	245.21K / 6 Page	View it Online	Download Datasheet

				Anpec Electronics Corporation ETC[ETC] ANPEC[Anpec Electronics Coropration] http://
Part No.	APM4835 APM4835KC-TR APM4835KC-TU
OCR Text	...iode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance b b VGS =0V, ID= -...
Description	P-Channel Enhancement Mode MOSFET
File Size	125.16K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BTS120 C67078-A5009-A2
OCR Text	...A/s, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/s, VR = 30 V Temperature Sensor Forward voltage ITS(on) = 10 mA, Tj = - 55 ...transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = 25 V Typ. transconductance gfs =...
Description	From old datasheet system TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) N-Channel TEMPFET
File Size	310.34K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	...s, Tj = 125 C Reverse recovery charge Qrr C IF = 50 A, VR = -1200 V, VGE = 0 V diF/dt = -600 A/s Tj = 25 C Tj = 125 C 4 12 - S...transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 200 A IC 160 140 1...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPV364M4K
OCR Text	...i(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise T...Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse R...
Description	IGBT SIP MODULE
File Size	269.79K / 10 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Dallas Semiconducotr DALLAS[Dallas Semiconductor]
Part No.	DS1302 DS1302N DS1302S DS1302S-16 DS1302SN DS1302SN-16 DS1302Z DS1302ZN
OCR Text	Charge Timekeeping Chip www.dalsemi.com FEATURES Real time clock counts seconds, minutes hours, date of the month, month, day of the we...transfer for read or write of clock or RAM data 8-pin DIP or optional 8-pin SOICs for surface mount ...
Description	0 TIMER(S), REAL TIME CLOCK, PDSO8 Trickle Charge Timekeeping Chip 0 TIMER(S), REAL TIME CLOCK, PDIP8
File Size	215.68K / 14 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS6680S
OCR Text	...ding a low RDS(ON) and low gate charge. The FDS6680S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. ...Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2010 526 186 pF pF pF...
Description	30V N-Channel PowerTrench SyncFET⑩
File Size	220.76K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-12
OCR Text	...SE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 TC= 125C 16 25C 75C 12 VGS = 0V Pulse Test Tch = 25C ID = 7A 16 VDS = 100V ...
Description	HIGH-SPEED SWITCHING USE
File Size	44.52K / 4 Page	View it Online	Download Datasheet

For charge-transfer Found Datasheets File :: 45787 Search Time::2.796ms
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