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Samsung Electronic
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| Part No. |
K4E661612EK4E641612E
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| OCR Text |
...50 50ns 13ns 84ns 20ns -60 60ns 15ns 104ns 25ns
cmos dram k4e661612e,k4e641612e v cc dq0 dq1 dq2 dq3 v cc dq4 dq5 dq6 dq7 n.c v cc w ras n.c n.c n.c n.c a0 a1 a2 a3 a4 a5 v cc v ss dq15 dq14 dq13 dq12 v ss dq11 dq10 dq9 dq8 n.c v ss lcas ... |
| Description |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
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| File Size |
393.88K /
36 Page |
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it Online |
Download Datasheet
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Hooray Electronics Co., Ltd.
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| Part No. |
HYM71V16M635BLT6
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| OCR Text |
...inimum row precharge time (trp) 15ns 20ns 0fh 14h byte28 minimum row active to row active delay (trrd) 15ns 15ns 0fh 0fh byte29 minimum /ras to /cas delay (trcd) 15ns 20ns 0fh 14h byte30 minimum /ras pulse width (tras) 45ns 45ns 2dh 2dh byt... |
| Description |
16Mx64|3.3V|K/H|x8|SDR SDRAM - SO DIMM 128MB 16Mx64 | 3.3 | | x8 | SDRAM的特别提款权-28MB的内
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| File Size |
242.42K /
14 Page |
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it Online |
Download Datasheet |
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TE Connectivity, Ltd.
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| Part No. |
HY57V28820HCLT-I
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| OCR Text |
...dd2p cke v il (max), t ck = 15ns 2 ma i dd2ps cke v il (max), t ck = 1 precharge standby current in non power down mode i dd2n cke v ih (min), cs v ih (min), t ck = 15ns input signals are changed one time during 30ns. al... |
| Description |
16Mx8|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 16Mx8 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
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| File Size |
185.42K /
11 Page |
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it Online |
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Samsung Electronic
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| Part No. |
M390S6450BT1
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| OCR Text |
...ve to row active delay (t rrd ) 15ns 0fh 29 minimum ras to cas delay (=t rcd ) 20ns 14h 30 minimum activate precharge time (=t ras ) 45ns 2dh 31 module row density 1 row of 256mb 40h 32 command and address signal input setup time 1.5ns 15h ... |
| Description |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
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| File Size |
70.29K /
9 Page |
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it Online |
Download Datasheet |
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Bourns, Inc.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K4E170411D K4E160411D
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| OCR Text |
... cac t rc t hpc remark -50 50ns 15ns 84ns 20ns 5v/3.3v -60 60ns 17ns 104ns 25ns 5v/3.3v ? active power dissipation speed 3.3v 5v 4k 2k 4k 2k -50 324 396 495 605 -6... |
| Description |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输
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| File Size |
259.16K /
21 Page |
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it Online |
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