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15ns Datasheet PDF File

For 15ns Found Datasheets File :: 2776 Search Time::1.593ms
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Part No.	K4S161622D-TC55
OCR Text	... cc2 p cke v il (max), t cc = 15ns 2 ma i cc2 ps cke & clk v il (max), t cc = 2 precharge standby current in non power-down mode i cc2 n cke 3 v ih (min), cs 3 v ih (min), t cc = 15ns input signals are changed one time during 30ns ...
Description	1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50
File Size	1,135.05K / 43 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V16635BLT8
OCR Text	...inimum row precharge time (trp) 15ns 20ns 0fh 14h byte28 minimum row active to row active delay (trrd) 15ns 15ns 0fh 0fh byte29 minimum /ras to /cas delay (trcd) 15ns 20ns 0fh 14h byte30 minimum /ras pulse width (tras) 45ns 45ns 2dh 2dh byt...
Description	PC133 SDRAM Unbuffered DIMM
File Size	376.45K / 14 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...-60 tRAC 50ns 60ns tCAC 15ns 17ns tRC 84ns 104ns tHPC 20ns 25ns Remark 5V/3.3V 5V/3.3V A0-A11 (A0 - A10)1 A0 - A9 (A0 - A10)1 Row Address Buffer Col. Address Buffer Column Decoder Data out Buffer OE Note) *1...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	... tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tPC 35ns 40ns Remark 5V/3.3V 5V/3.3V A0-A11 (A0 - A10)1 A0 - A9 (A0 - A10)1 Row Address Buffer Col. Address Buffer Column Decoder Data out Buffer OE Note) *1 : 2K ...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V16635BLT6
OCR Text	...inimum row precharge time (trp) 15ns 20ns 0fh 14h byte28 minimum row active to row active delay (trrd) 15ns 15ns 0fh 0fh byte29 minimum /ras to /cas delay (trcd) 15ns 20ns 0fh 14h byte30 minimum /ras pulse width (tras) 45ns 45ns 2dh 2dh by...
Description	PC133 SDRAM Unbuffered DIMM
File Size	445.27K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	... OE tRAC 50ns 60ns tCAC 15ns 15ns tRC 90ns 110ns tPC 35ns 40ns Remark 5V/3.3V 5V/3.3V A0-A11 (A0 - A9)1 A0 - A7 (A0 - A9)1 Row Address Buffer Col. Address Buffer Column Decoder DQ8 to DQ15 Note) *1 : 1K Refr...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KMM466F104CT1
OCR Text	...t rac t cac t rc t hpc -l5 50ns 15ns 84ns 20ns -l6 60ns 17ns 104ns 25ns pin configurations note : a11 & a10 are used for only kmm466f104ct1-l (4k ref.) pin 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 front v ss dq0 ...
Description	1M x 64 DRAM SODIMM(1M x 64 ?ㄦ?RAM妯″?)
File Size	397.17K / 21 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KMM466F404BS2
OCR Text	...s time from cas ) from 13ns to 15ns @ -5 in ac characteristics. version 0.1(nov. 1997) ? changed pcb for signal integrity. ? changed module part no. from kmm466f404bs1 to kmm466f404bs2 caused by pcb revision . version 0.2(june 1998) ...
Description	4M x 64 DRAM SODIMM(4M x 64 ?ㄦ?RAM妯″?)
File Size	403.70K / 21 Page	View it Online	Download Datasheet


Part No.	M366S0824CT0-C1L M366S0824CT0-C1H
OCR Text	...c2 p cke v il (max), t cc = 15ns 8 ma i cc2 ps cke & clk v il (max), t cc = 8 precharge standby current in non power-down mode i cc2 n cke 3 v ih (min), cs 3 v ih (min), t cc = 15ns input signals are changed one time durin...
Description	8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
File Size	137.24K / 9 Page	View it Online	Download Datasheet

				G-LINK Technology
Part No.	GLT7256L08-10J3 GLT7256L08-10TS GLT7256L08-12J3 GLT7256L08-15J3 GLT7256L08-12TS GLT7256L08-15TS GLT7256L08-8J3 GLT7256L08-8TS
OCR Text	... soj 300mil 28l glt7256l08-15j3 15ns low power soj 300mil 28l glt7256l08-8 ts 8 ns low power tsop glt7256l08-10ts 10ns low power tsop glt7256l08-12ts 12ns low power tsop glt7256l08-15ts 15ns low power tsop parts numbers (top mark) definiti...
Description	10ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM 12ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM 15ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM 8ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
File Size	841.94K / 10 Page	View it Online	Download Datasheet

For 15ns Found Datasheets File :: 2776 Search Time::1.593ms
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