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20v Datasheet PDF File

For 20v Found Datasheets File :: 42514 Search Time::2ms
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				SYNC POWER Crop.
Part No.	SPP6307S36RGB
OCR Text	...ion( sot-363 ) ? p-channel -20v/0.45a,r ds(on) = 0.65 ? @v gs =-4.5v -20v/0.35a,r ds(on) = 0.90 ? @v gs =-2.5v -20v/0.25a,r ds(on) = 1.5 ? @v gs =-1.8v ? super high density cell design for extremely low rds (on) ? exceptional o...
Description	P-Channel Enhancement Mode MOSFET
File Size	209.88K / 8 Page	View it Online	Download Datasheet

				Nihon Inter Electronics Corporation
Part No.	PRHMB600E6 PRHMB600E6C
OCR Text	...e-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 600a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 600ma . . ...
Description	IGBT Module-Dual
File Size	283.61K / 4 Page	View it Online	Download Datasheet

				Nihon Inter Electronics Corporation
Part No.	PRHMB200E6
OCR Text	...e-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 200a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 200ma . . ...
Description	IGBT Module-Dual
File Size	247.67K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMDPB70XPE
OCR Text	...rain-source voltage t j =25c ---20v v gs gate-source voltage -12 - 12 v i d drain current v gs =-4.5v; t amb =25c; t 5 s [1] ---4.2a static characteristics (per transistor) r dson drain-source on-state resistance v gs =-4.5v; i d =-2a; ...
Description	20 V dual P-channel Trench MOSFET
File Size	823.97K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMDPB55XP
OCR Text	...rain-source voltage t j =25c ---20v v gs gate-source voltage -12 - 12 v i d drain current v gs =-4.5v; t amb =25c; t 5 s [1] ---4.5a static characteristics (per transistor) r dson drain-source on-state resistance v gs =-4.5v; i d =-3.4a...
Description	20 V, dual P-channel Trench MOSFET
File Size	864.00K / 15 Page	View it Online	Download Datasheet

				Monolithic Power Systems
Part No.	MP6903 MP6903DS
OCR Text	... 260 shutdown current v dd =20v, en=0v 350 420 a light-load mode current 290 400 a thermal shutdown (5) 170 180 190 c thermal shutdown hysteresis (5) 30 40 50 c enable uvlo rising 1.1 1.5 1.9 v enabl...
Description	Fast Turn-off Intelligent Controller
File Size	315.82K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHF7330SE
OCR Text	...e leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 41 v gs = 12v, i d = 3.0a q gs gate-to-source charge 7.0 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge...
Description	N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 娌?? ???浠舵?搴?Rad Hard HEXFET????朵?绠々
File Size	94.41K / 8 Page	View it Online	Download Datasheet


Part No.
OCR Text	...leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 41 v gs =12v, i d = 2.9a q gs gate-to-source charge ? ? 7.0 nc v ds = 200v q gd gate-to-drain (?miller?) charge ? ? ...
Description
File Size	128.20K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies
Part No.	H15R1203
OCR Text	...rent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =15.0a - 13.9 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. param...
Description	Reverse conducting IGBT
File Size	2,224.03K / 15 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP6900GSM
OCR Text	... gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =6a - 9 15 nc q gs gate-source charge v ds =24v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =15v - 8 - ns t r ri...
Description	Simple Drive Requirement, DC-DC Converter Suitable
File Size	131.49K / 9 Page	View it Online	Download Datasheet

For 20v Found Datasheets File :: 42514 Search Time::2ms
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