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  20v Datasheet PDF File

For 20v Found Datasheets File :: 43370    Search Time::1.672ms    
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    MTP3J36Y3

Cystech Electonics Corp.
Cystech Electonics Corp...
Part No. MTP3J36Y3
OCR Text ... cystek product specification -20v p-channel enhancement mode mosfet mtp3j36y3 bv dss -20v i d -350ma r dson @v gs =-4.5v, i d =-350ma 0.64(typ) r dson @v gs =-4v, i d =-300ma 0.68(typ) r dson @v gs =-2.5v, i d =-300ma 1.1 (typ)...
Description -20v P-CHANNEL Enhancement Mode MOSFET

File Size 295.69K  /  8 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ..., VGS = 0V, TJ = 150C 200 VGS = 20v nA -200 VGS = -20v 200 ID = 130A 52 nC VDS = 32V 59 VGS = 10V --- VDD = 20v --- ID = 130A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    AP4410AGM-HF14

Advanced Power Electronics Corp.
Part No. AP4410AGM-HF14
OCR Text ...gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =9a - 12 18 nc q gs gate-source charge v ds =20v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 7 - nc t d(on) turn-on delay time v ds =15v - 7 - ...
Description Simple Drive Requirement

File Size 54.82K  /  4 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...Junction to PCB (Typical) 2 20v (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 13.9A 8.8A 56A 75W 0.6W/C 450mJ 5.0V/ns -55 to 150C 300C 1.67C/W 4C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    DnI
Part No. DFP75N75
OCR Text ...source leakage, forward v gs = 20v, v ds = 0v 100 na gate-source leakage, reverse v gs = -20v, v ds = 0v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 2.0 - 4.0 v r ds(on) static drain-sour...
Description N-Channel MOSFET

File Size 752.76K  /  7 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...Junction to PCB (Typical) 2 20v (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 22A 14A 88A 100W 0.8W/C 500mJ 5.0V/ns -55 to 150C 300C 1.25C/W 3C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W ...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ... 40V, VGS = 0V, TJ = 125C VGS = 20v VGS = -20v ID = 160A VDS = 32V VGS = 10V VDD = 20v ID = 160A RG = 2.6 VGS = 10V V/C Reference to 25C, ID = 1mA VDS = VGS, ID = 250A e e d Between lead, 6mm (0.25in.) from package and center of...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ... 40V, VGS = 0V, TJ = 125C VGS = 20v VGS = -20v ID = 75A VDS = 32V VGS = 10V VDD = 20v ID = 75A RG = 2.5 VGS = 10V f f D G S Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 ...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    SSG4510

SeCoS Halbleitertechnologie GmbH
Part No. SSG4510
OCR Text ...i gss - - 100 na v gs = 20v drain-source leakage current t j =25 c i dss - - 1 a v ds =80v, v gs =0 t j =55 c - - 5 static drain-source on-resistance 2 r ds(on) - - 112 m v gs =10v, i d =2a - - 120 v...
Description N & P-Ch Enhancement Mode Power MOSFET

File Size 1,077.48K  /  7 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 20v nA -100 VGS = -20v 160 ID = 43A 29 nC VDS = 60V 55 VGS = 10V, See Fig. 6 and 13 --- VDD = 38V --- ID = 43A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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