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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP9620GM
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON)
G S S
-20V 20m -9.5A
ID
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance ... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
78.59K /
6 Page |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP9585M
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON)
G
-80V 180m -2.7A
ID
SO-8
S S
S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, l... |
| Description |
P-CHANNEL ENHANCEMENT MODE
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| File Size |
69.36K /
4 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
IRF9520 FN2281
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| OCR Text |
...less Otherwise Specified SYMBOL bvdss VGS(TH) IDSS TEST CONDITIONS ID = -250A, VGS = 0V (Figure 10) VGS = VDS, ID = -250A VDS = Rated bvdss, VGS = 0V VDS = 0.8 x Rated bvdss, VGS = 0V TC = 125oC MIN -100 -2 -6 0.9 VGS = -10V, ID = -6A, VDS ... |
| Description |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
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| File Size |
57.36K /
7 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
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| Part No. |
IRF430
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| OCR Text |
...ance junction to ambient symbol bvdss vgs(th) 'gss 'dss ld(on) rds(on) 9fs 'd(on) tr 'd(off) tf qg(tot) qgs qgd ciss coss crss ld ls r8jc r9ja test conditions id = 250ua, vgs = ov (figure 10) vgs = vds. id = 250na vgs = 20v vds = rated bvds... |
| Description |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
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| File Size |
149.39K /
3 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
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| Part No. |
IRF540 IRF541 IRF542
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| OCR Text |
...to drain "miller" charge symbol bvdss vgs(th) idss 'd(on) igss rds(on) 9fs 'd(on) tf 'd(off) tf q9(tot) qgs qgd test conditions id = 250ua, vgs = ov (figure 10) vgs = vds. id = 250ua vds = rated bvdss, vgs = ov vds = 0.8 x rated bvdss> vgs ... |
| Description |
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
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| File Size |
980.08K /
3 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
IRF9540 RF1S9540SM FN2282
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| OCR Text |
...less Otherwise Specified SYMBOL bvdss VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw on Tab to the Center of Die Measured From the Drain Lead, 6mm (0.25in) from Pa... |
| Description |
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system
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| File Size |
59.17K /
7 Page |
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it Online |
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Analog Devices, Inc.
A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP9585J AP9585H
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON) ID
-80V 180m -11.2A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC c... |
| Description |
P-CHANNEL ENHANCEMENT MODE P沟道增强
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| File Size |
69.95K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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