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BELLING[SHANGHAI BELLING CO., LTD.]
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| Part No. |
BLV4N60
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| OCR Text |
bvdss RDS(ON) ID
600V 2.2 4A
BLV4N60 600V 4A N VDMOS
TC=25oC
VDS VGS ID IDM PD EAS IAR EAR Tj TSDG ( TC=100 oC) ( 1) 25 ( 2) 600 + 20 4 2.53 16 104 0.83 218 4 10.4 -55 to +150 -55 to +150 V V A A A W W/ ... |
| Description |
N-channel Enhancement Mode Power MOSFET
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| File Size |
492.44K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FCA16N60
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| OCR Text |
...cs
Symbol
Off Characteristics bvdss bvdss / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Volta... |
| Description |
600V N-Channel MOSFET
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| File Size |
850.32K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FCB20N60_05 FCB20N60 FCB20N6005
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| OCR Text |
...cs
Symbol
Off Characteristics bvdss bvdss / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Volta... |
| Description |
600V N-Channel MOSFET
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| File Size |
999.60K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FCB20N60FTM FCB20N60F
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| OCR Text |
...s
Symbol
Of Characteristics f bvdss bvdss TJ
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Conditions
VGS = 0V, ID = 250 A, TJ = 25 C VGS = 0V, ID = 250 A, TJ = 150 C
Min
600 --------
Typ
-650... |
| Description |
600V N-CHANNEL FRFET
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| File Size |
859.42K /
8 Page |
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it Online |
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HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
IRF234 IRF235 IRF236 IRF237
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| OCR Text |
...less Otherwise Specified SYMBOL bvdss TEST CONDITIONS VGS = 0V, ID = 250A, (Figure 10) 250 275 VGS(TH) VGS = VDS, ID = 250A IDSS VDS = Rated bvdss, VGS = 0V VDS = 0.8 x Rated bvdss, VGS = 0V TJ =125oC 2.0 4.0 25 250 V V V A A MIN TYP MAX UN... |
| Description |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| File Size |
68.51K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FCI11N60_0507 FCI11N60 FCI11N600507
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| OCR Text |
...cs
Symbol
Off Characteristics bvdss bvdss / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Volta... |
| Description |
600V N-Channel MOSFET
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| File Size |
965.57K /
8 Page |
View
it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FCI11N60 FQP7N60
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| OCR Text |
...cs
Symbol
Off Characteristics bvdss bvdss / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
TC = 25C unless otherwise noted
Parameter
Drain-Sourc... |
| Description |
600V N-Channel MOSFET
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| File Size |
577.68K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FCI7N60
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| OCR Text |
...cs
Symbol
Off Characteristics bvdss bvdss / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Volta... |
| Description |
600V N-Channel MOSFET
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| File Size |
947.56K /
8 Page |
View
it Online |
Download Datasheet |
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