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charge-transfer Datasheet PDF File

For charge-transfer Found Datasheets File :: 52598 Search Time::3.625ms
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				List of Unclassifed Man... Quantum Research Group
Part No.	QT60240-ATG QT60160 QT60160-ATG
OCR Text	...ology: patented spread-spectrum charge-transfer (transverse mode) key outline sizes: 6mm x 6mm or larger (panel thickness dependent); widely different sizes and shapes possible key spacings: 8mm or wider, center to center (panel thickne...
Description	16 AND 24 KEY QMATRIX TOUCH SENSOR ICs
File Size	611.89K / 26 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK762R4-60E BUK762R4-60E-15
OCR Text	...characteristics q gd gate-drain charge i d =25a; v ds =48v; v gs =10v; see figure 13 ; see figure 14 - 45.5 - nc buk762r4-60e all inform...transfer capacitance - 642 880 pf t d(on) turn-on delay time v ds =45v; r l =1.8 ? ; v gs =10v; r ...
Description	N-channel TrenchMOS standard level FET
File Size	210.75K / 14 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK03N7DPA
OCR Text	...g ? 2.0 4.0 ? total gate charge qg ? 16 ? nc gate to source charge qgs ? 5.6 ? nc gate to drain charge qgd ? 5.1 ? n...transfer characteristics v ds = 5 v pulse test tc = 75c 25c ?25c v gs = 2.4 v gate to source voltag...
Description	30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
File Size	205.80K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK03N3DPA
OCR Text	...g ? 2.0 4.0 ? total gate charge qg ? 22.3 ? nc gate to source charge qgs ? 6.1 ? nc gate to drain charge qgd ? 6.3 ? ...transfer characteristics v ds = 5 v pulse test tc = 75c 25c ?25c pulse test v gs = 2.2 v gate to so...
Description	30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
File Size	190.09K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK1056DPB RJK1056DPB-15
OCR Text	... rg ? 0.5 ? ? total gate charge qg ? 41 ? nc gate to source charge qgs ? 13 ? nc gate to drain charge qgd ? 7.5 ? nc...transfer characteristics drain to source voltage v ds (v) maximum safe operation area drain curr...
Description	100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching 100V, 25A, 14m?max. Silicon N Channel Power MOS FET Power Switching
File Size	147.00K / 7 Page	View it Online	Download Datasheet

				Cystech Electonics Corp...
Part No.	MTB40N06E3
OCR Text	...8a features ? low gate charge 40m ? simple drive requirement ? pb-free lead plating package equivalent circuit ...transfer admittance vs drain current 0.01 0.1 1 10 0.01 0.1 1 10 drain current-id(a) g fs , forward ...
Description	N -Channel Enhancement Mode Power MOSFET
File Size	218.65K / 7 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMN30H4D0L-13 DMN30H4D0L-7
OCR Text	...c rss ? 8.7 ? total gate charge q g ? 7.6 ? nc v ds = 192v, v gs = 10v, i d = 0.5a gate-source charge q gs ? 0.5 ...transfer characteristics i, d r ai n c u r r e n t (a) d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5...
Description	N-CHANNEL ENHANCEMENT MODE MOSFET Low Gate Threshold Voltage
File Size	368.00K / 6 Page	View it Online	Download Datasheet

For charge-transfer Found Datasheets File :: 52598 Search Time::3.625ms
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