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  rg-59 u Datasheet PDF File

For rg-59 u Found Datasheets File :: 1868    Search Time::1.453ms    
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    APT5010LVFR APT20M22LVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVFR APT20M22LVFR
OCR Text ... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

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    APT5010LVR

Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

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    APT5014B2LC APT5014LLC APT5014

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5014B2LC APT5014LLC APT5014
OCR Text ... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6y ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX uNIT Amps Volts ns C ...59 (.102) 5.45 (.215) BSC 2-Plcs. Gate Collector Emitter Gate Collector Emitter 0.48 (.019)...
Description POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

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    APT5014B2VR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5014B2VR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 5600 737 330 234 36 115 12 15 45 7 6720 1030 500 350 54 170 24 30 70 14 ns ...59 (.102) 050-5622 Rev A 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm

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    APT5014BFLL APT5014SFLL

Advanced Power Technology
Part No. APT5014BFLL APT5014SFLL
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 35 140 1.3 15 250 525 ...59 (.102) 050-7025 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.46K  /  2 Page

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    APT5014LVR

ADPOW[Advanced Power Technology]
Part No. APT5014LVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 5600 737 330 234 36 115 12 15 45 7 6720 1030 500 350 54 170 24 30 70 14 ns ...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.64K  /  4 Page

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    APT5014 APT5014BLL APT5014SLL

Advanced Power Technology
Part No. APT5014 APT5014BLL APT5014SLL
OCR Text ... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 1.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 35 140 1.3 ...59 (.102) 050-7006 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.46K  /  2 Page

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    APT5015BLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5015BLC
OCR Text ... RM VA FO AD IN VDD = 0.5 VDSS RG = 1.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 32 128 1.3...59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are ...
Description POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 28.40K  /  2 Page

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    APT5015 APT5015BVR

ADPOW[Advanced Power Technology]
Part No. APT5015 APT5015BVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 4400 600 230 200 30 80 12 14 55 11 5280 840 350 300 45 120 25 30 80 20 ns n...59 (.102) 050-5561 Rev C 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description POWER MOS V 500V 32A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016

ADPOW[Advanced Power Technology]
Part No. APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016
OCR Text ... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 1.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 30 120 1.3 ...59 (.102) 050-7005 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.47K  /  2 Page

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