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  rg-59 u Datasheet PDF File

For rg-59 u Found Datasheets File :: 1862    Search Time::1.5ms    
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    APT10021JFLL

ADPOW[Advanced Power Technology]
Part No. APT10021JFLL
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 37 148 1.3 18 300 600 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 1.8 7.4 16 30 Tj = 125C Tj =...
Description Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.46K  /  2 Page

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    APT10021JLL

ADPOW[Advanced Power Technology]
Part No. APT10021JLL
OCR Text ... = 15V 254 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C ns MIN TYP MAX uNIT Amps Volts ns C 37 148 1.3 (Body Diode) 2 (VGS = 0V, IS = -ID[Cont.]) 1300 38.0 Reverse Recovery Charge (IS = -ID[Cont.],...
Description Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.69K  /  2 Page

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    APT10026L2FLL

ADPOW[Advanced Power Technology]
Part No. APT10026L2FLL
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG =0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 38 152 1.3 18 310 625 ...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.80K  /  2 Page

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    APT10026L2LL

ADPOW[Advanced Power Technology]
Part No. APT10026L2LL
OCR Text ... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 38 152 1.3 ...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.49K  /  2 Page

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    APT10057WVR

ADPOW[Advanced Power Technology]
Part No. APT10057WVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 6600 595 290 335 29 165 16 13 59 8 7900 830 430 500 45 250 32 26 90 16 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay...
Description POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.75K  /  4 Page

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    APT10078BFLL APT10078SFLL

Advanced Power Technology
Part No. APT10078BFLL APT10078SFLL
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 14 56 1.3 18 200 350 ...59 (.102) 050-7040 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT10078BLL APT10078SLL

ADPOW[Advanced Power Technology]
Part No. APT10078BLL APT10078SLL
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6W MIN TYP MAX uNIT 2510 430 73 93 11 59 10 6 30 8.6 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOuRCE-DRAIN DIODE RA...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.53K  /  2 Page

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    APT10086BLC APT10086SLC

Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT10086BLC APT10086SLC
OCR Text ... RM VA FO AD IN VDD = 0.5 VDSS RG = 1.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 13 52 (VGS...59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate ...
Description POWER MOS VI 1000V 13A 0.860 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 34.77K  /  2 Page

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    APT10086BVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10086BVFR
OCR Text ... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT pF 3700 350 180 185 16 90 12 10 43 10 4440 490 270 275 24 135 24 20 65 20 n...59 (.102) 050-5595 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm

File Size 68.65K  /  4 Page

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    APT10086BVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10086BVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3700 350 180 185 16 90 12 10 43 10 4440 490 270 275 24 135 24 20 65 20 ns n...59 (.102) 050-5562 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm

File Size 65.94K  /  4 Page

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For rg-59 u Found Datasheets File :: 1862    Search Time::1.5ms    
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