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  pep Datasheet PDF File

For pep Found Datasheets File :: 1537    Search Time::1.687ms    
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    MRF5S21045NBR1 MRF5S21045NR1 MRF5S21045NR109

Freescale Semiconductor, Inc
Part No. MRF5S21045NBR1 MRF5S21045NR1 MRF5S21045NR109
OCR Text ...ma p out , output power (watts) pep v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two-tone measurements 15 13 12 10 -40 -1 0 1 p out , output power (watts) pep 10 -2 0 -3 0 100 -60 -5 0 d , drain efficiency (%) d d , drain efficiency (%) g...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 620.42K  /  16 Page

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    BLF6G20-11009 BLF6G20LS-110

NXP Semiconductors N.V.
Part No. BLF6G20-11009 BLF6G20LS-110
OCR Text ... load power; typical values p l(pep) (w) 0 140 100 120 40 20 80 60 001aaj072 18 16 20 22 g p (db) 14 30 15 45 60 h d (%) 0 g p h d v ds = 30 v; i dq = 1400 ma; f = 1960 mhz. v ds = 30 v; i dq = 1400 ma; f = 1960 mhz. fig 2. two-tone cw...
Description Power LDMOS transistor BLF6G20-110<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G20LS-110<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G20LS-110<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;

File Size 73.60K  /  10 Page

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    ST Microelectronics
Part No. SD4590
OCR Text ...3 = -28db max. @ p out = 150w pep n inherent ruggedness: load mismatch tolerance of 5:1 min. vswr 3 db overdrive capability n esd sensitivity, class 3 (mil std-883d method 3015) description ...
Description 800-960 MHZ CELLULAR BASE STATION RF POWER TRANSISTORS

File Size 596.71K  /  8 Page

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    PH1516-10

Tyco Electronics
Part No. PH1516-10
OCR Text ... typ 3rd imd at 10 watts pep l class a: +49 dbm typ 3rd order intercept point l common emitter configuration l internal input impedance matching l diffused emitter ballasting absolute maximum ratings at 25...
Description Wireless Bipolar Power Transistor, 10W 1.45 - 1.60 GHz

File Size 263.94K  /  4 Page

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    PH1516-10

Tyco Electronics
Part No. PH1516-10
OCR Text ... typ 3rd imd at 10 watts pep l class a: +49 dbm typ 3rd order intercept point l common emitter configuration l internal input impedance matching l diffused emitter ballasting absolute maximum ratings at 25...
Description Wireless Bipolar Power Transistor

File Size 280.86K  /  4 Page

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    PTB20079

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20079
OCR Text ... Watts minimum output power for pep applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts, 1.6-1.7 GHz Class A/AB Chara...
Description 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor

File Size 184.11K  /  3 Page

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    PH1516-100

Tyco Electronics
Part No. PH1516-100
OCR Text ... typ 3rd imd at 100 watts pep common emitter configuration internal input impedance matching . diffused emitter ballasting absolute maximum ratings at 25c parameter symbol rating collector-base voltage v cm 63 ...
Description Wireless Bipolar Power Transistor, 100W 1450 - 1550 MHz
Wireless Bipolar Power Transistor/ 1 OOW 1450 - 1550 MHz

File Size 150.72K  /  2 Page

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    Motorola, Inc.
Part No. MRF9060MBR1 MRF9060MR1
OCR Text ...6 volts output power ? 60 watts pep power gain ? 18.0 db efficiency ? 40% (two tones) imd ? ?31.5 dbc ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 60 watts cw output power ? excellent thermal stability ? c...
Description The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs

File Size 417.67K  /  12 Page

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    Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. MRF9030MR1
OCR Text ...6 volts output power ? 30 watts pep power gain ? 20 db efficiency ? 41% (two tones) imd ? ?31 dbc ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 30 watts (cw) output power ? excellent thermal stability ? cha...
Description The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA

File Size 445.98K  /  12 Page

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    Motorola, Inc.
Part No. MRF9030LSR1 MRF9030D MRF9030LR1
OCR Text ...6 volts output power ? 30 watts pep power gain ? 19 db efficiency ? 41.5% imd ? - 32.5 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 945 mhz, 30 watts cw...
Description The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 540.44K  /  12 Page

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For pep Found Datasheets File :: 1537    Search Time::1.687ms    
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