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ST Microelectronics
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Part No. |
SD4590
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OCR Text |
...3 = -28db max. @ p out = 150w pep n inherent ruggedness: load mismatch tolerance of 5:1 min. vswr 3 db overdrive capability n esd sensitivity, class 3 (mil std-883d method 3015) description ... |
Description |
800-960 MHZ CELLULAR BASE STATION RF POWER TRANSISTORS
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File Size |
596.71K /
8 Page |
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it Online |
Download Datasheet |
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Motorola, Inc.
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Part No. |
MRF9060MBR1 MRF9060MR1
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OCR Text |
...6 volts output power ? 60 watts pep power gain ? 18.0 db efficiency ? 40% (two tones) imd ? ?31.5 dbc ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 60 watts cw output power ? excellent thermal stability ? c... |
Description |
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
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File Size |
417.67K /
12 Page |
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it Online |
Download Datasheet |
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Motorola, Inc. Motorola Mobility Holdings, Inc.
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Part No. |
MRF9030MR1
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OCR Text |
...6 volts output power ? 30 watts pep power gain ? 20 db efficiency ? 41% (two tones) imd ? ?31 dbc ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 30 watts (cw) output power ? excellent thermal stability ? cha... |
Description |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
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File Size |
445.98K /
12 Page |
View
it Online |
Download Datasheet |
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Motorola, Inc.
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Part No. |
MRF9030LSR1 MRF9030D MRF9030LR1
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OCR Text |
...6 volts output power ? 30 watts pep power gain ? 19 db efficiency ? 41.5% imd ? - 32.5 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 945 mhz, 30 watts cw... |
Description |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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File Size |
540.44K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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