| |
|
 |
Excelics Semiconductor
|
| Part No. |
EPA160A
|
| OCR Text |
...typical power gain at 18ghz 0.3 x 1600 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial heterojun...5 11.5 8.5 db pae power added efficiency at 1db compression vds=8v, ids... |
| Description |
8-12V high efficiency heterojunction power FET
|
| File Size |
27.42K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MACOM[Tyco Electronics]
|
| Part No. |
MAAPGM0053-DIE
|
| OCR Text |
0.5 W 2.0-18.0 GHz
Features
0.5 Watt Saturated Output Power Level Variable Drain Voltage (5-10V) Operation MSAGTM Process Proven Manufacturability and Reliability
No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susce... |
| Description |
Amplifier, Distributed Power, 0.5 W 2.0-18.0 GHz
|
| File Size |
336.22K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Electronic Theatre Controls, Inc.
|
| Part No. |
TC1101
|
| OCR Text |
...ures ? low noise figure: nf = 0.5 db typical at 12 ghz ? high associated gain: ga = 12 db typical at 12 ghz ? high dynamic range: 1 db compression power p -1 = 18 dbm at 12 ghz ? breakdown voltage: bv dgo 9 v ? lg = 0.25 m,... |
| Description |
Low Noise and Medium Power GaAs FETs 低噪声和中等功率GaAs场效应管
|
| File Size |
149.01K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
