0.5-18ghz pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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0.5-18ghz Datasheet PDF File

For 0.5-18ghz Found Datasheets File :: 339 Search Time::3.546ms
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				HIROSE[Hirose Electric]
Part No.	AT-320 AT-310 AT-115 AT-114 AT-206
OCR Text	...ble in abundant variations from 0 to 4 dB in 0.5 dB steps, from 4 to 10 dB in 1 dB steps, and in 12, 13, 15, 20, 26 and 30 dB so that levels can be finely adjusted. AT-103 2.SMA Type The coupling portions are available in all types of ...
Description	Fixed Attenuators (SMA Type)
File Size	62.40K / 3 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Eon Silicon Solution
Part No.	EPB018A5 EPB018A5-70 EPB018A7-70 EPB018A9-70
OCR Text	... CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED " MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND...
Description	Super Low Noise High Gain Heterojunction FET
File Size	30.90K / 2 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SBFP420M
OCR Text	...ns unit : mm 0000 [SBFP420M] 0.25 * * Low noise : NF=1.1dB typ (f=1.8GHz). High cut-off frequency : fT=18GHz typ (VCE=1V). : fT=25G...5 1.5 35 160 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Paramete...
Description	UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
File Size	44.73K / 2 Page	View it Online	Download Datasheet

				UMS[United Monolithic Semiconductors]
Part No.	EC2612 EC2612-99F_00 EC2612-99F/00
OCR Text	0.15m gate pseudomorphic high electron mobility transistor (0.15m PHEMT) technology. Gate width is 120m and the 0.15m T-shaped aluminium gat...5 9.5 Max 60 1.9 Unit mA dB dB ESD Protections: Electrostatic discharge sensitive device observe ...
Description	40GHz Super Low Noise PHEMT
File Size	109.89K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	EPA018BV
OCR Text	...AL POWER GAIN AT 18 GHz TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASS...5 mA PER BIN RANGE : Via Hole Chip Thickness: 75 13 microns All Dimensions In Microns ELECTRI...
Description	High Efficiency Heterojunction Power FET
File Size	46.89K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. ETC Excelics Semiconductor
Part No.	EPA120E
OCR Text	0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY,...5 29.5 12.0 9.5 46 210 240 360 380 -1.0 -15 -14 35 o MAX UNIT dBm dB % 510 mA mS -2....
Description	High Efficiency Heterojunction Power FET
File Size	31.39K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	RMM2080
OCR Text	...cuit incorporates ionimplanted, 0.5-m gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain cont...
Description	2-18 GHz Wideband Variable-Gain Driver Amplifier
File Size	195.54K / 5 Page	View it Online	Download Datasheet

				HIROSE[Hirose Electric]
Part No.	AT-113 AT-303 AT-210 AT-320 AT-100 AT-101 AT-102 AT-103 AT-104 AT-105 AT-106 AT-107 AT-108 AT-109 AT-110 AT-112 AT-114 AT-115 AT-120 AT-126 AT-203 AT-206 AT-220 AT-306 AT-310
OCR Text	...ble in abundant variations from 0 to 4 dB in 0.5 dB steps, from 4 to 10 dB in 1 dB steps, and in 12, 13, 15, 20, 26 and 30 dB so that levels can be finely adjusted. AT-103 2.SMA Type The coupling portions are available in all types of ...
Description	Fixed Attenuators (SMA Type)
File Size	62.40K / 3 Page	View it Online	Download Datasheet

For 0.5-18ghz Found Datasheets File :: 339 Search Time::3.546ms
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