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  n-cdma Datasheet PDF File

For n-cdma Found Datasheets File :: 2163    Search Time::1.25ms    
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    BLC6G22-100 BLC6G22LS-100 BLC6G22-130

NXP Semiconductors N.V.
Part No. BLC6G22-100 BLC6G22LS-100 BLC6G22-130
OCR Text ...Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 -- 30 January 2006 2 of 9 Philips ...CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2...
Description UHF power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 44.14K  /  9 Page

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    MRFE6S9201HR3 MRFE6S9201HSR3

Freescale Semiconductor, Inc
Part No. MRFE6S9201HR3 MRFE6S9201HSR3
OCR Text N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MH...CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pi...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 484.69K  /  13 Page

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    MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3

Freescale (Motorola)
MOTOROLA[Motorola, Inc]
Part No. MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
OCR Text ...icarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1000 mA, f1 = 2135 MHz, f2...
Description 2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors

File Size 558.64K  /  12 Page

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    MRFE6S9160HR3 MRFE6S9160HSR3

Freescale Semiconductor, Inc
Part No. MRFE6S9160HR3 MRFE6S9160HSR3
OCR Text N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. * Typical Single - Carrier N - CDMA. P...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 494.47K  /  13 Page

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    MRFE6P9220HR3

Freescale Semiconductor, Inc
Part No. MRFE6P9220HR3
OCR Text N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz...CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS - 95 CDMA (Pilot...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 400.17K  /  12 Page

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Part No. AGR19045EF
OCR Text ... the agr19045ef is a 45 w, 28 v n-channel later- ally diffused metal oxide semiconductor (ldmos) rf power field effect transistor (fet) sui...cdma performance: v dd = 28 v, i dq = 550 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz, is-95 cdma (pi...
Description L BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 189.43K  /  11 Page

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    Freescale Semiconductor
Part No. MRF5S9150HR3 MRF5S9150HSR3
OCR Text N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. * Typical Single - Carrier N - CDMA Performance @ 880 MH...
Description SINGLE n-cdma LATERAL N-CHANNEL RF POWER MOSFETs

File Size 554.20K  /  12 Page

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    Freescale Semiconductor
Part No. MRF5S9100NBR1 MRF5S9100NR1
OCR Text N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MH...CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pout = 20 Watts Avg., IS - 95 CDMA (Pilot,...
Description SINGLE n-cdma LATERAL N-CHANNEL RF POWER MOSFETs

File Size 552.60K  /  16 Page

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For n-cdma Found Datasheets File :: 2163    Search Time::1.25ms    
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