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RFMD[RF Micro Devices]
RF Micro Devices, Inc.
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| Part No. |
RF2152PCBA-N RF2152PCBA-J RF2152
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| OCR Text |
...AMPLIFIERS
D E RS F IG 21 62 N /R S
.157 .150 .012 .008 .003 .001
1
Product Description
The RF2152 is a high-power, high-efficien...CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in th... |
| Description |
CAP .33F 5.5V GOLD SD VERTICAL
DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3V POWER AMPLIFIER RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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| File Size |
250.04K /
12 Page |
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sirenza.com
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| Part No. |
SLD-1026Z
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| OCR Text |
...(%) 35 30 25 20 15 10 5 0 0.01
n-cdma IS-95 (Pilot, Sync, Paging, Traffic Codes 8 - 13)
n-cdma spectrum. Pout= 0.3 W, Vdd=28V, Idq=40mA. PAR = 9.8 dB @ 0.01% Probability on CCDF
-35
20 10 0
ACPR (dB), ALT1 (dB)
1.2288 MHz Channel ... |
| Description |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
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| File Size |
823.65K /
21 Page |
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it Online |
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TriQuint Semiconductor, Inc.
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| Part No. |
AH212-EG AH212-EGPCB2140 AH212-EGPCB1960
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| OCR Text |
...
Functional Diagram
Vcc1 1 8 N/C Vbias1 2 7 Vcc2 / RF Out
RF In 3
6 Vcc2 / RF Out 5 N/C
* +5V Single Positive Supply * Internal ...CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal act... |
| Description |
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| File Size |
453.63K /
12 Page |
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it Online |
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Freescale Semiconductor
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| Part No. |
MRF6P21190HR6
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| OCR Text |
...ower Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
422.69K /
12 Page |
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it Online |
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California Eastern Laboratories
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| Part No. |
55410 NE55410GR-T3-AZ
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| OCR Text |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
DESCRIPTION
The NE55410GR is an N-channel enha...CDMA/GSM/D-AMPS/PDC/n-cdma/PCS etc. * UHF-band TV transmitter PA
Caution Observe precautions when... |
| Description |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
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| File Size |
316.24K /
13 Page |
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it Online |
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MAXIM INTEGRATED PRODUCTS INC
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
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| Part No. |
MAX2323 MAX2323EGI MAX2323EVKIT MAX2325EGI MAX2325
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| OCR Text |
... 7 9 -- 14 15 16 -- 19, 20 RLNA N.C. PLNAIN L N A Bia s-S e t t ing P in . F o r no min a l b ia s, connect a 24k r esist o r t o g ro u n d...CDMA-, CDMA+ RBIAS
Low-Band RF Input Port. Blocking capacitor is required, which may be used as p... |
| Description |
Triple/Dual-Mode CDMA LNA/Mixers
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| File Size |
160.99K /
14 Page |
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it Online |
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Conexant Systems, Inc.
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| Part No. |
RM912
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| OCR Text |
...00
25.00
30.00
Legend
N I L 824 MHz @ -30 C 837 MHz @ -30 C 849 MHz @ -30 C N I L 824 MHz @ +25 C 837 MHz @ +25 C 849 MHz @ +25 C ...CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Figure 2. Digital Adjacent Channel Power Magnitu... |
| Description |
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
CDMA/AMPS 3-4 Volt Power Amplifier (824849 MHz)
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| File Size |
386.66K /
20 Page |
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it Online |
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Freescale Semiconductor
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| Part No. |
MHVIC2115NR2
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| OCR Text |
...+150 150
Unit Vdc Vdc C C
N.C. VGS3 VGS2 VGS1 Quiescent Current Temperature Compensation VGS3 VGS2 VGS1 RFin RFin IC VDS3/RFout RFin V...CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 96 mA, IDQ2 = 2... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
440.22K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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