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MCD162 1N6082 B39162 LT347 BAV70GH 54LS1 MIC520 C143E
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  15ns Datasheet PDF File

For 15ns Found Datasheets File :: 2776    Search Time::1.5ms    
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    HYNIX SEMICONDUCTOR INC
Part No. HY5V66DLF-P
OCR Text ...dd2p cke v il (max), t ck = 15ns 2 ma i dd2ps cke v il (max), t ck = 2ma precharge standby current in non power down mode i dd2n cke v ih (min), cs v ih (min), t ck = 15ns input signals are chan ged one time during 2clks...
Description 4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54

File Size 252.59K  /  13 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5V22GF-7
OCR Text ...de idd2p cke vil(max), tck = 15ns 4 ma idd2ps cke vil(max), tck = 4 precharge standby current in non power down mode idd2n cke vih(min), cs vih(min), tck = 15ns input signals are changed one time during 2clks. all other pin...
Description 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90

File Size 186.93K  /  11 Page

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Part No. K4G323222M-PL70 K4G323222M-PL45 K4G323222M-PC45 K4G323222M-PC80 K4G323222M-PC50
OCR Text ...c2 p cke v il (max), t cc = 15ns 2 ma i cc2 ps cke & clk v il (max), t cc = 2 precharge standby current in non power-down mode i cc2 n cke 3 v ih (min), cs 3 v ih (min), t cc = 15ns input signals are changed one time dur...
Description 1M X 32 SYNCHRONOUS GRAPHICS RAM, 5.5 ns, PQFP100
1M X 32 SYNCHRONOUS GRAPHICS RAM, 4 ns, PQFP100
1M X 32 SYNCHRONOUS GRAPHICS RAM, 6 ns, PQFP100
1M X 32 SYNCHRONOUS GRAPHICS RAM, 4.5 ns, PQFP100

File Size 1,143.43K  /  48 Page

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    K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E
OCR Text ...n) Io = 0 mA CKEVIL(max), tCC = 15ns CKE & CLKVIL(max), tCC = CKEVIH(min), CSVIH(min), tCC = 15ns Input signals are changed one time during 30ns CKEVIH(min), CLKVIL(max), tCC = Input signals are stable CKEVIL(max), tCC = 15ns CKE & CLKVIL...
Description 1M x 16 SDRAM

File Size 671.65K  /  42 Page

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    K6R4016C1C-C K6R4016C1C-C10 K6R4016C1C-C12 K6R4016C1C-C15 K6R4016C1C-E K6R4016C1C-E10 K6R4016C1CE12 K6R4016C1CE15 K6R401

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R4016C1C-C K6R4016C1C-C10 K6R4016C1C-C12 K6R4016C1C-C15 K6R4016C1C-E K6R4016C1C-E10 K6R4016C1CE12 K6R4016C1CE15 K6R4016C1C-I K6R4016C1C-I10 K6R4016C1C-I12 K6R4016C1C-I15
OCR Text ...x D.C parameters. Item ICC 12ns 15ns 20ns Previous 190mA 185mA 180mA Current 200mA 195mA 190mA Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary 2.2 Relax Absolute Maximum R...
Description 256Kx16 Bit High Speed Static RAM(5V Operating).

File Size 183.08K  /  11 Page

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