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意法半导
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| Part No. |
TS820-T TS820-B
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| OCR Text |
...v) itm(a) tj max.: vto=0.85v rd=46m w tj=tj max. tj=25 c fig. 8: on-statecharacteristics (maximum values). 02468101214161820 0 20 40 60 80 100 s(cm ) rth(j-a) ( c/w) fig. 9: thermal resistance junction to ambient ver- sus copper surface u... |
| Description |
Sensitive SCR(硅控整流
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| File Size |
70.76K /
6 Page |
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Kexin
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| Part No. |
KDS4501H
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| OCR Text |
...channel -5.6 a, -20 v r ds(on) =46m @v gs =- 4.5 v r ds(on) =63m @v gs =-2.5v absolute maximum ratings ta = 25 parameter symbol n-channel p- channel unit drain to source voltage v dss 30 -20 v gate to source voltage v gs 20 8 v drain curren... |
| Description |
Complementary PowerTrench Half-Bridge MOSFET
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| File Size |
91.26K /
3 Page |
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it Online |
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Anpec Electronics Corporation
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| Part No. |
APM7322K APM7322KC-TRL
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| OCR Text |
... gs = 10v r ds(on) =46m ? (typ.) @ v gs = 4.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) g1 s1 s2 g2 d1 d1 d2 d2 top view of sop ? 8 g1 ... |
| Description |
Dual N-Channel Enhancement Mode MOSFET
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| File Size |
117.33K /
10 Page |
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it Online |
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http://
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| Part No. |
KDD3680
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| OCR Text |
...eatures 25 a, 100 v. r ds(on) = 46m @v gs =10v r ds(on) = 51m @v gs =6v low gate charge (38 nc typical) fast switching speed high performance trench technology for extremely low r ds(on) high power and current handling capability absolute m... |
| Description |
100V N-Channel Power Trench MOSFET
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| File Size |
59.32K /
2 Page |
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it Online |
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Price and Availability
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