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AT250 UR3KB100 037N0059 95812 MMBT2369 20NFA60 FSDM0 3SK259
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  ices Datasheet PDF File

For ices Found Datasheets File :: 10865    Search Time::1.515ms    
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    ONSEMI[ON Semiconductor]
Part No. 2N4921G 2N4923G 2N4921 2N4921_06 2N4922 2N4922G 2N4923 2N492106
OCR Text ...uration Region 108 IC = 10 x ices 107 106 IC ices 105 104 103 ices VALUES OBTAINED FROM FIGURE 12 0 30 60 90 120 150 VOLTAGE (VOLTS) IC = 2 x ices VCE = 30 V 1.5 TJ = 25C 1.2 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE...
Description Medium−Power Plastic NPN Silicon Transistors

File Size 87.43K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. 2N5302G 2N5302_06 2N5302 2N530206
OCR Text ...07 V, VOLTAGE (VOLTS) IC = 10 x ices 106 IC = 2 x ices 105 IC ices 104 103 102 TYPICAL ices VALUES OBTAINED FROM FIGURE 13 0 20 40 60 80 100 120 140 160 180 200 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.03 0.05 0.1 VBE(sat) @ IC/IB = ...
Description High−Power NPN Silicon Transistor

File Size 89.06K  /  5 Page

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    BC856

Vishay Siliconix
Part No. BC856
OCR Text ...= 150 C BC857 BC857 BC858 BC859 ices ices ices ices ices ices ices ices ICBO ICBO BC856 to BC859 Vishay Semiconductors Min Typ 30 60 1.5 x 10-4 2 x 10-4 3 x 10-4 90 150 270 110 200 420 180 290 520 90 250 700 900 600 660 0.2 0.2 0.2 0.2...
Description Small Signal Transistors (PNP)

File Size 162.29K  /  9 Page

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    BC856 BC858 BC858C-7-F BC856A BC856A_ BC856A-7-F BC856B BC857 BC857A BC857B BC857C BC858A BC858B BC858C

DIODES[Diodes Incorporated]
Part No. BC856 BC858 BC858C-7-F BC856A BC856A_ BC856A-7-F BC856B BC857 BC857A BC857B BC857C BC858A BC858B BC858C
OCR Text ...RS = 2k, f = 1kHz, f = 200Hz ices ices ices ICBO ICBO fT CCBO NF Gain Bandwidth Product Collector-Base Capacitance Noise Figure Notes: 4. Short duration pulse test used to minimize self-heating effect. DS11207 Rev. 18 - 2 ...
Description PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

File Size 228.38K  /  4 Page

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    PM100RLB060

Mitsubishi Electric Semiconductor
Part No. PM100RLB060
OCR Text ...VEC ton trr tc(on) toff tc(off) ices Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 100A VCIN = 0V, Pulsed (Fig. 1) -IC = 100A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 300V, IC = 100A ...
Description FLAT-BASE TYPE INSULATED PACKAGE

File Size 95.95K  /  6 Page

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    BUK866-400IZ

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK866-400IZ
OCR Text ...(BR)EC V(BR)GES VGE(TO) VGE(TO) ices ices IEC IEC IGES VCEsat PARAMETER Collector-gate zener breakdown voltage Reverse collector-emitter breakdown voltage Gate-emitter breakdown voltage Gate threshold voltage Gate threshold voltage Zero gat...
Description Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

File Size 84.91K  /  8 Page

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    ONSEMI[ON Semiconductor]
Part No. 2N4920G 2N4918 2N4918_04 2N4919 2N4920
OCR Text ...aturation Region 108 IC = 10 ices 107 106 105 104 103 ices VALUES OBTAINED FROM FIGURE 13 0 30 60 90 120 150 VOLTAGE (VOLTS) VCE = 30 V 1.5 1.2 TJ = 25C IC ices IC = 2x ices 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0....
Description Medium-Power Plastic PNP Silicon Transistors

File Size 117.59K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. 2N5302 2N5302-D
OCR Text ...8 107 106 105 104 103 102 0 IC ices IC = 10 x ices VCE = 30 V 2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.03 0.05 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.1 0.3 0.5 1.0 3.0 5.0 10 30 TJ =...
Description High-Power NPN Silicon Transistor

File Size 116.47K  /  8 Page

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    PM50RSE120

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. PM50RSE120
OCR Text ...VEC ton trr tc(on) toff tc(off) ices Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Test Condition VD = 15V, IC = 50A (Fig. 1) VCIN = 0V, Pulsed -IC = 50A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 15V0V VCC = 600V, IC = 50...
Description INTELLIGENT POWER MODULES

File Size 128.55K  /  6 Page

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