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PST7021M MAZY430 C4000 RODUC L74VHC1 SY10E N82503 HCT240
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For ices Found Datasheets File :: 11894    Search Time::1.766ms    
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    ON Semi
Part No. 2N5192 2N5191 ON0055
OCR Text ... V TJ = 150C 107 106 105 IC ices IC = 2 x ices 104 103 102 20 IC = 10 x ices VCE = 30 V 100C REVERSE FORWARD 25C ices 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 (TYPICAL ices VALUES OBTAINED FROM FIGURE 5) 40 60 80 100 120 140 160 ...
Description Sllllcon NPN Power Translstors
From old datasheet system

File Size 216.92K  /  6 Page

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    Red Lion Controls. Inc
Part No. RM-4DI2-4DO2
OCR Text ... n emi emissions fcc part 15, ices-003, class a; en55022, ce n emc immunity en50082-1 (iec801-2, 3, 4) ce n vibration iec68-2-6 n hazardous locations ul 1604, csa c22.2/213- m1987, (class i, div 2, groups a, b, c, d), e...
Description I/O Modules

File Size 1,075.06K  /  1 Page

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    ONSEMI[ON Semiconductor]
Part No. BD241C BD242B ON0192 BD242C BD241B
OCR Text ...) VBE(on) Symbol VCEO ICEO IEBO ices hFE hfe fT tr @ VCC = 30 V Min. 80 100 3.0 20 25 10 td @ VBE(off) = 2.0 V Max. 200 200 1.8 1.2 1.0 0.3 IC/IB = 10 TJ = 25C Figure 3. Turn-On Time mAdc mAdc Adc MHz Unit Vdc Vdc Vdc 3.0 BD241C BD24...
Description POWER TRANSISTORS COMPLEMENTARY SILICON
From old datasheet system
CASE 221A-09 TO-220AB

File Size 106.37K  /  6 Page

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    TD13005D TD13004D

VISHAY TELEFUNKEN
Part No. TD13005D TD13004D
OCR Text ...se recovery current TD13004D ices TD13005D ices TD13004D ices TD13005D ices TD13004D V(BR)CEO TD13005D V(BR)CEO V(BR)EBO VCEsat VBEsat hFE hFE hFE VCEsatdyn VCEsatdyn fT mA mA mA mA V V V V V VF VFP IRM 1.3 4 5 1.5 5 V V ...
Description POWER TRANSISTOR, TO-251
From old datasheet system
Silicon NPN High Voltage Switching Transistor

File Size 140.22K  /  10 Page

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    Vishay
Part No. TE13005D TE13004D
OCR Text ... 0.6 4 V V MHz Unit TE13004D ices TE13005D ices TE13004D ices TE13005D ices TE13004D V(BR)CEO TE13005D V(BR)CEO V(BR)EBO VCEsat VBEsat hFE hFE hFE VCEsatdyn VCEsatdyn fT mA mA mA mA V V V V V VF VFP IRM 1.2 4 4 1.5 5 V V ...
Description Silicon NPN High Voltage Switching Transistor
From old datasheet system

File Size 94.33K  /  9 Page

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    TIP42A TIP42C TIP41A TIP41C

Motorola, Inc
ON Semiconductor
Part No. TIP42A TIP42C TIP41A TIP41C
OCR Text ...LLECTOR CURRENT (AMP) ICEO IEBO ices hFE fT hfe 160 tr Min 60 80 100 3.0 20 30 15 -- -- -- -- -- -- -- -- -- td @ VBE(off) 5.0 V Max 400 400 400 2.0 1.5 1.0 0.7 0.7 0.7 -- 75 -- -- -- -- -- Figure 3. Turn-On Time TJ = 25C VCC = 30 V IC...
Description POWER TRANSISTORS COMPLEMENTARY SILICON

File Size 134.06K  /  6 Page

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    PM150RSE120

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. PM150RSE120
OCR Text ...VEC ton trr tc(on) toff tc(off) ices Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Test Condition VD = 15V, IC = 150A (Fig. 1) VCIN = 0V, Pulsed -IC = 150A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 15V0V VCC = 600V, IC = ...
Description MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

File Size 119.47K  /  6 Page

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    Motorola Inc
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. BD243B ON0193 BD244C BD243C BD244B
OCR Text ...LLECTOR CURRENT (AMP) ICEO IEBO ices hFE hfe fT Min 80 100 3.0 20 30 15 -- -- -- -- -- -- TJ = 25C VCC = 30 V IC/IB = 10 Max 400 400 2.0 1.5 1.0 0.7 -- -- -- -- -- -- Figure 3. Turn-On Time td @ VBE(off) = 5.0 V 4.0 Vdc Vdc Vdc -- -- mA...
Description Complementary Silicon Plastic Power Transistors
From old datasheet system
6 AMPERE POWER TRANSISTORS
POWER TRANSISTORS COMPLEMENTARY SILICON

File Size 140.50K  /  6 Page

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    Vishay
Part No. BUF646A BUF646 BUF646_A
OCR Text ...ct f = 1 MHz Type Symbol BUF646 ices BUF646A ices BUF646 ices BUF646A ices BUF646 V(BR)CEO BUF646A V(BR)CEO V(BR)EBO VCEsat VCEsat VCEsat VBEsat VBEsat VBEsat hFE hFE hFE VCEW Min Typ Max 100 100 0.5 0.5 Unit mA mA 400 450 9 0.25 0.40...
Description Silicon NPN High Voltage Switching Transistor
From old datasheet system

File Size 88.42K  /  8 Page

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For ices Found Datasheets File :: 11894    Search Time::1.766ms    
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