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    2SB772 2SD882

Weitron Technology
Part No. 2SB772 2SD882
OCR Text ...j Tstg PNP/2SB772 -30 -40 -5.0 -3.0 -7.0 -0.6 NPN/2SD882 30 40 5.0 3.0 7.0 0.6 1.0 10 150 Unit Vdc Vdc Vdc Adc Adc Adc W W C C -55 to +150 Device Marking 2SB772=B772 , 2SD882=D882 ELECTRICAL CHARACTERISTICS Characteristi...
Description PNP/NPN EPITAXIAL PLANAR TRANSISTORS

File Size 249.83K  /  5 Page

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    2SC1383 2SC1384

Weitron Technology
Part No. 2SC1383 2SC1384
OCR Text ...SC1383 2SC1384 25 50 30 60 5.0 1.0 Peak Collector Current Icp(DC) 1.5 Adc 1 1.0 8.0 125 2SC1383=2SC1383, 2SC1384=2SC1384 2.0 10 10 2SC1383 2SC1384 2SC1383 2SC1384 25 50 30 60 20 1 0.1 u WEITRON http://www....
Description NPN GENERAL PURPOSE TRANSISTORS

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    2SC1980 2SA921

PANASONIC[Panasonic Semiconductor]
Part No. 2SC1980 2SA921
OCR Text ...50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 mA mA mW C C 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff...
Description SILICON NPN EPITAXIAL PLANER TYPE

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    2SC2721-T

NEC
Part No. 2SC2721-T
OCR Text ...se)* PT Tj Tstg Ratings 60 60 5.0 0.7 1.0 1 150 -55 to +150 Unit V V V A A W C C * PW 10 ms, duty cycle 50% ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current...
Description Silicon transistor

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    TOSHIBA
Part No. 2SC3429
OCR Text ...) NF (1) NF (2) 2 2 Weight: 0.012 g (typ.) Test Condition VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min 3/4 3/4 3/4 ...
Description Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

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    2SC4533

Panasonic Semiconductor
Part No. 2SC4533
OCR Text 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-...
Description SILICON NPN TRIPLE DIFFUSION PLANAR TYPE(FOR HIGH BREAKDOWN VOLTAGE HIGH-SPEED SWITCHING)

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    2SC4620 2SC4505

ROHM[Rohm]
Part No. 2SC4620 2SC4505
OCR Text 0.1A) 2SC4505 / 2SC4620 Features 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7s at Ic =100mA. 4) Complements the 2SC450...
Description POWER TRANSISTOR (400V, 0.1A)

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    2SC4626

Panasonic Semiconductor
Part No. 2SC4626
OCR Text ...nit: mm s Features q q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion...
Description SILICON NPN EPITAXIAL PLANER TYPE(FOR HIGH-FREQUENCY AMPLIFICATION)

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    2SC4628

Hitachi Semiconductor
Part No. 2SC4628
OCR Text ... -- -- -- Max -- -- 10 1 320 -- 0.9 MHz pF Unit V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = VEB = 3 V, IC = 0 VCB = 15 V, IE = 0 VCE = 10 V, IC = 2 mA VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, emitter common, f = 1 MHz VCB...
Description SILICON NPN PLANAR

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    SANYO
Part No. 2SC4727
OCR Text ...4.5 1.2 2.6 1.4 1.2 1.0 7.5 8.5 1.6 0.5 1 2 3 0.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collect...
Description NPN Epitaxial Planar Silicon Transistor 20V/8A Switching Applications

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