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74AC163B T5001040 SF1040 NJU6572C C74ACT2 200000 BCP020T ALD124
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  0.520 Datasheet PDF File

For 0.520 Found Datasheets File :: 16099    Search Time::1.578ms    
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    1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B

Microsemi, Corp.
Motorola Mobility Holdings, Inc.
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola Inc]
ON Semi
MOTOROLA[Motorola, Inc]
Diotec Elektronische
Part No. 1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B 1N5355B 1N5353B 1N5342B 1N5388B 1N5359B 1N5345B 1N5381B 1N5363B 1N5383B 1N5336B ON0008 1N5341B 1N5361B 1N5334B 1N5335B 1N5337B 1N5340B 1N5343B 1N5346B 1N5348 1N5348B 1N5350B 1N5351B 1N5357B 1N5358B 1N5360B 1N5362B 1N5365B 1N5367B 1N5368B 1N5369B 1N5370B 1N5373B 1N5376B 1N5377B 1N5379B 1N5380B 1N5382B 1N5384B 1N5385B 1N5386 1N5386B 1N5387B 1N5333BTHRU1N5388B 1N5354B
OCR Text ... MOUNTING POSITION: Any WEIGHT: 0.7 gram (approx) WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seoul, Korea 1N5333B throu...520 475 430 395 365 340 315 1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5358B 1N5359B 1N5360B 1N536...
Description    5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 16 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 47 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 12 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.300 VOLTS 5瓦稳压稳压二极管3.30
MOSFET P-CH 250V 200MA SOT-89
500 mW DO-35 Glass Zener Voltage Regulator Diodes
From old datasheet system
Silicon-Power-Z-Diodes (non-planar technology)

File Size 87.83K  /  6 Page

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    2SA1034 2SA1035 2SC2406 2SC2405

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1034 2SA1035 2SC2406 2SC2405
OCR Text ...mm s Features q q q 2.9 -0.05 Parameter Collector to base voltage Collector to 2SA1034 2SA1035 2SA1034 Symbol VCBO VCEO VEBO IC...520 FS HS T 360 ~ 700 FT HT Pulse measurement Marking Symbol 1 Transistor PC -- Ta 240...
Description Silicon PNP epitaxial planer type

File Size 50.24K  /  3 Page

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    2SA1127

Panasonic Semiconductor
Part No. 2SA1127
OCR Text ...50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Ba...520 T 360 ~ 700 hFE Rank 1 Transistor PC -- Ta 500 -80 Ta=25C -70 -100 25C Ta=75C -80 ...
Description Silicon PNP epitaxial planer type

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    2SA2009

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2009
OCR Text 0.425) For low-frequency high breakdown voltage amplification I Features * High collector to emitter voltage VCEO * Low noise voltage NV...520 T 360 to 700 * Conditions VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 IC = -10 A, IE = 0 IC = -1...
Description    Silicon PNP epitaxial planer type

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    2SA2021

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2021
OCR Text ...ion through the tape packing 0.33+0.05 -0.02 3 0.10+0.05 -0.02 (0.40) (0.40) 0.800.05 1.200.05 5 0.15 min. 0.23+0.05 -0.02 ...520.03 5 0.15 min. 0.800.05 1.200.05 1 ...
Description Silicon PNP epitaxial planer type

File Size 43.31K  /  1 Page

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    2SA921

PANASONIC[Panasonic Semiconductor]
Part No. 2SA921
OCR Text ...50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Ba...520 - 0.6 V MHz mV min typ max -100 -1 Unit nA A V V V *h FE Rank classification R 180 ~ 3...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

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    2SB1036

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1036
OCR Text ... 4.00.2 s Features q q q 0.70.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitt...520 - 0.6 V MHz mV min typ max -100 -1 Unit nA A V V V *h FE Rank classification R 180 ~ 3...
Description Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

File Size 36.41K  /  2 Page

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    2SB726 2SA1748

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SB726 2SA1748
OCR Text ...~ +150 Unit V V V 13.50.5 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 mA mW C C 2.540.15 1:Emitter 2:Col...520 T 360 ~ 700 hFE Rank 1 Transistor PC -- Ta 500 -80 Ta=25C -70 -50 25C Ta=75C -40 -25C...
Description Silicon PNP epitaxial planer type

File Size 34.69K  /  2 Page

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    2SB745 2SB745A 2SD661A 2SB0745 2SD661

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SB745 2SB745A 2SD661A 2SB0745 2SD661
OCR Text ... and 2SD661A Unit: mm 6.90.1 0.4 q q q 2.40.2 2.00.2 3.50.1 Low noise voltage NV. High foward current transfer ratio hFE. M type...520 T 360 ~ 700 hFE Rank 1 Transistor PC -- Ta 500 -160 -140 2SB745, 2SB745A IC -- VC...
Description Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SB788 2SD958

PANASONIC[Panasonic Semiconductor]
Part No. 2SB788 2SD958
OCR Text ... to 2SD958 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum ...520 T 360 ~ 700 hFE Rank 4.10.2 High collector to emitter voltage VCEO. Low noise voltage N...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 35.77K  /  2 Page

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