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  0.8us Datasheet PDF File

For 0.8us Found Datasheets File :: 483    Search Time::1.203ms    
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    MC6800 MC6800CL MC6800CP MC6800CS MC6800L MC6800P MC6800S MC68A00CL MC68A00CP MC68A00CS MC68A00L MC68A00P MC68A00S MC682

MOTOROLA[Motorola, Inc]
Part No. MC6800 MC6800CL MC6800CP MC6800CS MC6800L MC6800P MC6800S MC68A00CL MC68A00CP MC68A00CS MC68A00L MC68A00P MC68A00S MC6828 MC68BOOP MC68BOOS MC68BOOL MC6844 MC6854 MC6808 MC6852 MC68B00 MC68622 MC6843 MCM6810 6800 MC6802 MC6821 MC6822 MC6829 MC6835 MC6839 MC6840 MC6845 MC6846 MC6847 MC6847Y MC68488 MC6850 MC6859
OCR Text ...{t,. . Clock Rates as High as 2.0 MHz ,~> *:;.> q Simple Bus Interface Without TTL ,$~~~~i$~' q Variable Length Stack q Halt and Single Ins...8US Available DelaV Hi-Z Enable Hi-Z DelaV Data Bus Enable Down Time During @l Up Time Data Bus Enab...
Description 8-BIT MPUS, 8-BIT MCUS, 8-BIT PERIPHERALS
8-BIT MICROPROCESSING UNIT (MPU)

File Size 3,992.33K  /  32 Page

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    AVH316K AV0716K AV2816K AV4216K AVXX16K AV2116K APLUSINTEGRATEDCIRCUITSINC.-AV2116K AV1416K

APLUS[Apuls Intergrated Circuits]
Aplus Intergrated Circuits
Aplus Integrated Circuits Inc.
Part No. AVH316K AV0716K AV2816K AV4216K AVXX16K AV2116K APLUSINTEGRATEDCIRCUITSINC.-AV2116K AV1416K
OCR Text ...perating) Tst (storage) Rating -0.5 ~ +7.0 Vss-0.3 < Vin < Vdd+0.3 GND < Vout < Vdd 0 ~ +70 -25 ~ +85 Unit V V V C C 7. DC CHARBDTERISTIC...8us at 6kHz). 2.> Hold/Unhold Hold: OKY/IO1/IO2 AUDIO Sub_table N Unhold: OKY/IO1/IO2 AUDIO ...
Description single-chip voice synthesizing CMOS IC 单芯片语音合成CMOS集成电路

File Size 358.89K  /  10 Page

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    BU2515AF

PHILIPS[Philips Semiconductors]
Part No. BU2515AF
OCR Text ...rent Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.2 MAX. 1500 800 9 20 45 5.0 0.4 UNIT V V A A W V A s Ths 25 C IC = 4.5 A; IB = 0.9 A f = ...8us 18us ts IB IBend tf 10 % t VCE t t - IBM Fig.1. Switching times waveforms....
Description Silicon Diffused Power Transistor

File Size 62.88K  /  6 Page

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    BU2515AX

PHILIPS[Philips Semiconductors]
Part No. BU2515AX
OCR Text ...rent Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.2 MAX. 1500 800 9 20 45 5.0 0.4 UNIT V V A A W V A s Ths 25 C IC = 4.5 A; IB = 0.9 A f = ...8us 18us ts IB IBend tf 10 % t VCE t t - IBM Fig.1. Switching times waveforms....
Description Silicon Diffused Power Transistor

File Size 65.06K  /  6 Page

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    BU2515DF

PHILIPS[Philips Semiconductors]
Part No. BU2515DF
OCR Text ...tage Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.2 MAX. 1500 800 9 20 45 5.0 2.2 0.4 UNIT V V A A W V A V s Ths 25 C IC = 4.5 A; IB = 0.9 ...8us D.U.T. IBend LB Cfb Rbe 18us VCE -VBB t Fig.1. Switching times waveforms. Fig.4...
Description Silicon Diffused Power Transistor

File Size 66.93K  /  7 Page

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    BU2515DX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2515DX
OCR Text ...tage Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.2 MAX. 1500 800 9 20 45 5.0 2.2 0.4 UNIT V V A A W V A V s Ths 25 C IC = 4.5 A; IB = 0.9 ...8us D.U.T. IBend LB Cfb Rbe 18us VCE -VBB t Fig.1. Switching times waveforms. Fig.4...
Description Silicon Diffused Power Transistor

File Size 69.05K  /  7 Page

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    K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4
OCR Text 0.7 -1- REV. 0.7 Aug. 2003 K4C5608/1638C Revision History Version 0.0 (Oct. / 5 / 2001) - First Release Version 0.1 (Dec. / 15 / ...8us * Self-Refresh * Power Down Mode * Variable Write Length Control * Write Latency = CAS Latency -...
Description 256Mb Network-DRAM

File Size 877.29K  /  42 Page

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    K4T51043Q K4T51043QB-GCCC K4T51043QB-GCD5 K4T51043QB-ZCCC K4T51043QB-ZCD5 K4T51083QB-GCCC K4T51083QB-GCD5 K4T51083QB-ZCC

Samsung semiconductor
Part No. K4T51043Q K4T51043QB-GCCC K4T51043QB-GCD5 K4T51043QB-ZCCC K4T51043QB-ZCD5 K4T51083QB-GCCC K4T51083QB-GCD5 K4T51083QB-ZCCC K4T51083QB-ZCD5 K4T51163QB-ZCD5
OCR Text ...SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pi...8us at lower then TCASE 85C, 3.9us at 85C < TCASE < 95 C * Package: 60ball FBGA - 128Mx4/64Mx8 , 84b...
Description 512Mb B-die DDR2 SDRAM

File Size 504.88K  /  29 Page

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    K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
OCR Text ... tWPREH of K4D263238M-QC50 from 0.3tCK to 0.25tCK -2- Rev. 1.3 (Aug. 2001) K4D263238M Revision 1.0 (December 13, 2000) * Defined ...8us. * Changed IIL,IOL test condition from 0V< VIN <VDD+0.3V to 0V< VIN <VDD. Revision 0.3 (June ...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

File Size 280.12K  /  19 Page

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    K4H510438C-LA2 K4H510438C-LB0 K4H510438C-LB3 K4H510438C-LCC K4H510438C-UC K4H510838C-UC

SAMSUNG[Samsung semiconductor]
Part No. K4H510438C-LA2 K4H510438C-LB0 K4H510438C-LB3 K4H510438C-LCC K4H510438C-UC K4H510838C-UC
OCR Text ... (RoHS compliant) Revision 1.0 January. 2005 Rev. 1.0 January. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) 512Mb C-die Revision Histo...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II Pb-Free pack...
Description 512Mb C-die DDR SDRAM Specification

File Size 209.84K  /  23 Page

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