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1-1l1a Datasheet PDF File

For 1-1l1a Found Datasheets File :: 39 Search Time::1.531ms
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					TOSHIBA[Toshiba Semiconductor]
Part No.	JDP2S02AFS
OCR Text	...es. Low series resistance: rs = 1.0 (typ.) Low capacitance: CT = 0.3 pF (typ.) 0.80.05 1.00.05 0.60.05 0.1 A Maximum Ratings (...1L1A Electrical Characteristics (Ta = 25C) Characteristics Reverse voltage Reverse current Forwa...
Description	Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications TOSHIBA Diode Silicon Epitaxial PIN Type
File Size	133.96K / 3 Page	View it Online	Download Datasheet

					TOSHIBA[Toshiba Semiconductor]
Part No.	JDP2S01AFS
OCR Text	... CT = 0.65 pF (typ.) 0.80.05 1.00.05 0.60.05 0.1 A Maximum Ratings (Ta = 25C) Characteristics Reverse voltage Forward current ...1L1A Electrical Characteristics (Ta = 25C) Characteristics Reverse voltage Reverse current Forwa...
Description	TOSHIBA Diode Silicon Epitaxial PIN Type
File Size	134.64K / 3 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	1SS413
OCR Text	1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 High Speed Switching Application 0.60.05 Unit: mm A 0.1 Lo...1L1A Weight:0.0006g(typ.) Note: Using continuously under heavy loads (e.g. the application of hig...
Description	High Speed Switching Application
File Size	169.83K / 3 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	1SS416
OCR Text	1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application 0.60.05 Unit: mm A 0.1 Sm...1L1A Weight: 0.6mg(typ.) Note: Using continuously under heavy loads (e.g. the application of high...
Description	High Speed Switching Application
File Size	128.25K / 3 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	1SS417
OCR Text	1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application 0.60.05 Unit: mm A 0.1 * ...1L1A Weight: 0.6mg(typ.) Note: Using continuously under heavy loads (e.g. the application of high te...
Description	0.1 A, SILICON, SIGNAL DIODE High Speed Switching Application
File Size	144.10K / 3 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	JDV2S07FS
OCR Text	...small-size tuner. 0.60.05 0.1 Unit: mm A 0.80.05 Maximum Ratings (Ta = 25C) Characteristics Reverse voltage Junction temper...1L1A Electrical Characteristics (Ta = 25C) Characteristics Reverse voltage Reverse current Capac...
Description	VCO for UHF Band Radio
File Size	145.45K / 3 Page	View it Online	Download Datasheet

					Toshiba Corporation Toshiba Semiconductor
Part No.	DF2S12FS
OCR Text	...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg ...1L1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: ...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.85 to 9.23; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	152.57K / 3 Page	View it Online	Download Datasheet

					Toshiba Corporation Toshiba Semiconductor
Part No.	DF2S16FS
OCR Text	...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg ...1L1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: ...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	130.11K / 3 Page	View it Online	Download Datasheet

					Toshiba Corporation Toshiba Semiconductor
Part No.	DF2S24FS
OCR Text	...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg ...1L1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: ...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.11 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	110.23K / 3 Page	View it Online	Download Datasheet

					Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
Part No.	DF2S5.6FS
OCR Text	...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg ...1L1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: ...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
File Size	110.34K / 3 Page	View it Online	Download Datasheet

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