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PHILIPS[Philips Semiconductors]
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| Part No. |
BUK563-100A
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| OCR Text |
...itching applications.
BUK563-100A
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 100 ... |
| Description |
PowerMOS transistor Logic level FET
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| File Size |
74.43K /
7 Page |
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it Online |
Download Datasheet
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Semelab(Magnatec)
TT electronics Semelab, Ltd.
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| Part No. |
SB16-100A-SMD SB16-100R-SMD SB16-100SMD SB16-100M-SMD
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| OCR Text |
....
SEME
SB16-100M-SMD SB16-100A-SMD SB16-100R-SMD
DUAL SCHOTTKY BARRIER DIODE IN A SMD1 CERAMIC SURFACE MOUNT PACKAGE FOR HI-REL APPLICATIONS
FEATURES
* HERMETIC CERAMIC PACKAGE * ISOLATED CASE
1
3
0 .7 6 (0 .0 3 0 ) m in .... |
| Description |
DUAL SCHOTTKY BARRIER DIODE IN A SMD1 CERAMIC SURFACE MOUNT PACKAGE FOR HI.REL APPLICATIONS
DUAL SCHOTTKY BARRIER DIODE IN A SMD1 CERAMIC SURFACE MOUNT PACKAGE FOR HI-REL APPLICATIONS
Dual Schottky Barrier Diode In a SMD1 Ceramic Surface Mount Package For HI-REL Application(Common Cathode)(双肖特基势垒二极HI-REL应用,SMD1陶瓷表贴封装,共阴极连)
Dual Schottky Barrier Diode In a SMD1 Ceramic Surface Mount Package For HI-REL Application(Common Anode)(双肖特基势垒二极HI-REL应用,SMD1陶瓷表贴封装,共阳极连)
Dual Schottky Barrier Diode In a SMD1 Ceramic Surface Mount Package For HI-REL Application(Series Connection)(双肖特基势垒二极HI-REL应用,SMD1陶瓷表贴封装,串行连接))
DUAL SCHOTTKY BARRIER DIODE IN A SMD1 CERAMIC SURFACE MOUNT PACKAGE FOR HIREL APPLICATIONS
DUAL SCHOTTKY BARRIER DIODE IN A SMD1 CERAMIC SURFACE MOUNT PACKAGE FOR HI.REL APPLICATIONS 16 A, 100 V, SILICON, RECTIFIER DIODE
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| File Size |
18.64K /
2 Page |
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it Online |
Download Datasheet |
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Philips
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| Part No. |
BUK7515-100A
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| OCR Text |
...tching applications.
BUK7515-100A
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 100 ... |
| Description |
TrenchMOS(tm) transistor Standard level FET
TrenchMOS TM transistor Standard level FET
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| File Size |
46.32K /
7 Page |
View
it Online |
Download Datasheet |
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PHILIPS[Philips Semiconductors]
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| Part No. |
BUK565-100A
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| OCR Text |
...itching applications.
BUK565-100A
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 100 ... |
| Description |
PowerMOS transistor Logic level FET
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| File Size |
52.99K /
7 Page |
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it Online |
Download Datasheet |
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Philips Semiconductors
NXP Semiconductors N.V.
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| Part No. |
BUK472-100A BUK472-100B
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| OCR Text |
100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters... |
| Description |
PowerMOS transistor Isolated version of BUK452-100A/B 6.1 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
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| File Size |
55.10K /
7 Page |
View
it Online |
Download Datasheet |
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Philips Semiconductors
NXP Semiconductors N.V.
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| Part No. |
BUK473-100A BUK473-100B
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| OCR Text |
100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters... |
| Description |
PowerMOS transistor Isolated version of BUK453-100A/B
PowerMOS transistor Isolated version of BUK453-100A/B 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
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| File Size |
55.83K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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