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				Sharp, Corp. Sharp Corporation Sharp Electrionic Components Sharp Electronics Corp.
Part No.	LH532000B LH532000BT
OCR Text	...echnology. CMOS 2M (256K x 8/128K x 16) MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW OE1/OE1/DC A7 A6 A5 A4 A3 A2 A1 A0 CE GN...WORD SWITCHOVER CIRCUIT ADDRESS BUFFER 29 A-1 NOTE: Pin numbers apply to the 40-pin DIP or SOP...
Description	CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
File Size	67.62K / 7 Page	View it Online	Download Datasheet

				WINBOND ELECTRONICS CORP
Part No.	W29S201T-55
OCR Text	128k 16 cmos flash memory with synchronous burst read publication release date: april 1999 - 1 - revision a1 general description the w2...word-by-word programming: 50 m s (max.) fast erase operation: 100 ms (typ.) fast synchronous burs...
Description	128K X 16 FLASH 5V PROM, 17 ns, PDSO48
File Size	254.84K / 31 Page	View it Online	Download Datasheet

				Integrated Device Technology
Part No.	IDT72T36105L7BBI
OCR Text	..., 16K x 36, 32K x 36, 64K x 36, 128K x 36 and 256K x 36 COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES PIN CONFIGURATION A1 BALL PAD CO...word data latency period, from the time the first word is written to an empty FIFO to the time it ca...
Description	2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS
File Size	549.01K / 57 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc.
Part No.	DS1258AB-70
OCR Text	...ound description the ds1258 128k x 16 nonvolatile (nv) srams are 2,097,152-b it fully static, nv srams, organized as 131,072 words by 1...word is accessed. if ceu is active with cel inactive, then only the upper byte of the addressed...
Description	128k x 16 Nonvolatile SRAM 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DMA40
File Size	200.03K / 8 Page	View it Online	Download Datasheet

				INTEGRATED DEVICE TECHNOLOGY INC
Part No.	72T2098L6-7BBGI 72T20108L6-7BBG IDT72T20108L6-7BBG
OCR Text	...ons 32k x 20/64k x 10, 64k x 20/128k x 10, 128k x 20/256k x 10, 256k x 20/512k x 10 february 13, 2009 a b c d e f g h j k l m n p r t v cc v...word data latency period, from the time the first word is written to an empty fifo to the time it ca...
Description	32K X 20 OTHER FIFO, 3.8 ns, PBGA208 64K X 20 OTHER FIFO, 3.8 ns, PBGA208
File Size	485.70K / 51 Page	View it Online	Download Datasheet

				ATMEL Corporation
Part No.	24C256
OCR Text	...* * * 2-Wire Serial EEPROMs 128K (16,384 x 8) 256K (32,768 x 8) * * Description The AT24C128/256 provides 131,072/262,144 bits of...word addressing requires a 14/15-bit data word address. AT24C128/256 AT24C128/256 Pin Capacit...
Description	2-Wire Serial EEPROMs
File Size	157.71K / 15 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1305BV18-100BZC CY7C1305BV18-133BZC CY7C1305BV18-167BZC CY7C1307BV18-100BZC CY7C1307BV18-133BZC CY7C1307BV18-167BZC CY7C1305BV18-100BZXC CY7C1307BV18-100BZXC
OCR Text	... A(16:0) Address Register 128K x 36 Array 128K x 36 Array 128K x 36 Array 128K x 36 Array Address Register 17 A(16:0...word of data is driven onto the Q[17:0] using C as the output timing reference. On the subsequent ri...
Description	18-Mbit Burst of 4 Pipelined SRAM with QD(TM)Architecture 18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
File Size	241.13K / 20 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1305AV18 CY7C1305AV18-100BZC CY7C1305AV18-133BZC CY7C1305AV18-167BZC CY7C1307AV18-100BZC
OCR Text	...ister 17 Address Register 128K x 36 Array 128K x 36 Array 128K x 36 Array 128K x 36 Array 17 A(16:0) K K CLK Gen....word of data is driven onto the Q[17:0] using C as the output timing reference. On the subsequent ri...
Description	18-Mb Burst of 4 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 4 Pipelined SRAM with QDR⑩ Architecture
File Size	324.65K / 20 Page	View it Online	Download Datasheet

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