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  180v 4a Datasheet PDF File

For 180v 4a Found Datasheets File :: 61    Search Time::1.687ms    
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    2SC508

Inchange Semiconductor Company Limited
Part No. 2SC508
OCR Text ...or-base breakdown voltage :VCBO=180v(min) APPLICATIONS For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1...4a; IB=0.4 A 1.5 V VBEsat Base-emitter saturation voltage IC=4a; IB=0.4 A 1.5 V...
Description Silicon NPN Power Transistors

File Size 118.99K  /  3 Page

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    BUW64A BUW64B BUW64C

Inchange Semiconductor Company Limited
Part No. BUW64a BUW64B BUW64C
OCR Text ...E= 160V;VBE= -1.5V,TC= 150 VCE= 180v;VBE= -1.5V VCE= 180v;VBE= -1.5V,TC= 150 VEB= 7V; IC=0 IC= 0.2A ; VCE= 2V ICEV Collector Cutoff Cu...4a ; VCE= 2V IE= 0 ;VCB= 10V; f= 0.1MHz IC= 0.5A ;VCE= 10V hFE-2 DC Current Gain BUW64B COB...
Description isc Silicon NPN Power Transistors

File Size 83.83K  /  2 Page

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    2N6704

Inchange Semiconductor Company Limited
Part No. 2N6704
OCR Text ...llector cutoff current v cev = 180v;v be =-1.5v v cev = 180v;v be =-1.5v;t j = 125 0.1 1.0 ma i ebo emitter cutoff current v eb ...4a ; v ce = 2v 20 c ob output capacitance i e = 0; v cb = 10v, f test = 0.1mhz 50 150 pf ...
Description isc Silicon NPN Power Transistor

File Size 82.17K  /  2 Page

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    2SC508

Savantic, Inc.
Part No. 2SC508
OCR Text ...or-base breakdown voltage :VCBO=180v(min) APPLICATIONS *For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1...4a; IB=0.4 A 1.5 V VBEsat Base-emitter saturation voltage IC=4a; IB=0.4 A 1.5 V...
Description Silicon NPN Power Transistors

File Size 130.73K  /  3 Page

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    FQA11N90

Fairchild Semiconductor
Part No. FQA11N90
OCR Text ... Ciss 4000 3500 10 VDS = 180v VDS = 450V VGS, Gate-Source Voltage [V] 8 VDS = 720V Capacitance [pF] 3000 2500 2000 1500 1000 500 0 -1 10 Coss 6 Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID ...
Description 900V N-Channel MOSFET

File Size 678.02K  /  8 Page

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    FQP5N90

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQP5N90
OCR Text ...gd 12 Ciss 10 VDS = 180v VDS = 450V VGS, Gate-Source Voltage [V] 8 VDS = 720V Capacitance [pF] 1200 1000 800 600 400 200 0 -1 10 Coss 6 Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 5...
Description 900V N-Channel MOSFET 5.4 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 675.06K  /  8 Page

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    FQA7N90

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA7N90
OCR Text ...Crss = Cgd 12 10 VDS = 180v VDS = 450V VGS, Gate-Source Voltage [V] 2500 Ciss 8 VDS = 720V Capacitance [pF] 2000 Coss 1500 6 4 1000 Crss 500 Notes : 1. VGS = 0 V 2. f = 1 MHz 2 Note ...
Description 900V N-Channel MOSFET

File Size 672.77K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQA11N90_F109 FQA11N90 FQA11N90_06 FQA11N9006
OCR Text ...urce Voltage [V] 10 VDS = 180v VDS = 450V Capacitance [pF] 8 3000 2500 2000 1500 1000 500 0 -1 10 Coss VDS = 720V 6 Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 11.4 A 10 0 10 1 ...
Description 900V N-Channel MOSFET

File Size 806.32K  /  9 Page

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    FQPF4N90C FQP4N90C

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF4N90C FQP4N90C
OCR Text ...+ Cgd Crss = Cgd 12 VDS = 180v 10 1000 VDS = 450V VDS = 720V 800 Ciss VGS , Gate-Source Voltage [V] 8 Capacitanc...4a 0 -1 10 10 0 10 1 0 0 5 10 15 20 VDS, Drain-Source Voltage [V] QG, Total ...
Description    900V N-Channel MOSFET
900V N-Channel Advance Q-FET C-Series

File Size 896.19K  /  10 Page

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    FQA11N9007 FQA11N90F109 FQA11N90-F109

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
Part No. FQA11N9007 FQA11N90F109 FQA11N90-F109
OCR Text ...urce Voltage [V] 10 VDS = 180v VDS = 450V Capacitance [pF] 8 3000 2500 2000 1500 1000 500 0 -1 10 Coss VDS = 720V 6 Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 11.4 A 10 0 10 1 ...
Description 900V N-Channel MOSFET 11.4 A, 900 V, 0.96 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 826.26K  /  9 Page

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For 180v 4a Found Datasheets File :: 61    Search Time::1.687ms    
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