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For 2.25m Found Datasheets File :: 1995 Search Time::2.796ms
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				AMD[Advanced Micro Devices]
Part No.	AM79C873KCW AM79C873
OCR Text	...cation# 22164 Rev: A Amendment/+2 Issue Date: February 1999 Refer to AMD's Website (www.amd.com) for the latest information. PRELIMINARY BLOCK DIAGRAM 25M OSCI LED1-4 TX CGM LED Driver PECL Driver FXTD 4B/5B Encoder ...
Description	NetPHY⑩ -1 10/100 Mbps Ethernet Physical Layer Single-Chip Transceiver with 100BASE-FX Support NETPHY⒙ -1 10/100 MBPS ETHERNET PHYSICAL LAYER SINGLE-CHIP TRANSCEIVER WITH 100BASE-FX SUPPORT NetPHY -1 10/100 Mbps Ethernet Physical Layer Single-Chip Transceiver with 100BASE-FX Support
File Size	190.07K / 44 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	...DS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4...25m 14nC 5.2nC 18.4nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum J...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D2
OCR Text	...DS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4...25m 14nC 5.2nC 21.6nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum J...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	... S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an un...25m 25m Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source...
Description	8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ587
OCR Text	2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 (Z) 1st.Edition. June 1999 Features * Low on-resistance R DS = 8.5 t...25m A 20 -10m A -2.5V 10 -10m A, -25m A VGS = -4V 5 Pulse Test 0 40 80 Tc 120 ( C) 160 Case Temperat...
Description	Silicon P Channel MOS FET High Speed Switching
File Size	38.71K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	NJM12901 NJM12901D1 NJM12901E NJM12901M NJM12901V PH2729-25M
OCR Text	2.70-2.90 GHz, 100s PULSE, 10% DUTY OUTLINE DRAWING FEATURES NPN Silicon Microwave Power Transistor Common Base Configuration Broa...25M M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS046 Rev...
Description	RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100s PULSE, 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS 2.70-2.90 GHz 100ms PULSE 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS / 2.70-2.90 GHz / 100s PULSE / 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100?? PULSE, 10% DUTY
File Size	97.49K / 2 Page	View it Online	Download Datasheet

				Diodes Incorporated ZETEX[Zetex Semiconductors] ZETEX PLC
Part No.	ZR404005F25 ZR404005N825 ZR404005R25 ZR40401F25 ZR40401N825 ZR40401R25 ZR4040-2.5 ZR40402F25 ZR40402N825 ZR40402R25 ZR404005F2 ZR4040-25 ZR4040125 ZR4040225 ZR4040525 ZR40402N825TA
OCR Text	2.5 VOLT MICROPOWER VOLTAGE REFERENCE ISSUE 3 - MARCH 1998 ZR4040-2.5 DEVICE DESCRIPTION The ZR4040-2.5 uses a bandgap circuit desig...25M 25V ZR4040225 ZR4040125 ZR4040525 ZR404005N825 0.5 E-Line * ZR4040225 E-Line * ZR4040125 E...
Description	PT 8C 8#20 PIN RECP PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE
File Size	62.22K / 4 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LMA110B LMA110
OCR Text	...4"X.064") Chip Thickness : 100m 2 Pad Dimension : 100m .5-8GHz MESFET Amplifier LMA110B Description The Filtronic LMA110B is a GaA...25m) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-...
Description	.5-8GHz MESFET Amplifier
File Size	105.87K / 4 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LMA110 LMA110A
OCR Text	2.7dB Typical Noise Figure 23dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Return Loss Typical 0.5-6GHz Frequency Bandwidth...25m) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-...
Description	.5-6 GHz MESFET Amplifier
File Size	80.46K / 3 Page	View it Online	Download Datasheet

For 2.25m Found Datasheets File :: 1995 Search Time::2.796ms
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