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  2.4-ohm Datasheet PDF File

For 2.4-ohm Found Datasheets File :: 29430    Search Time::2.203ms    
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    AD5235 AD5235BRU25 AD5235BRU250

ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
Part No. AD5235 AD5235BRU25 AD5235BRU250
OCR Text ... to +5V Single Supply Operation 2.5V Dual Supply Operation 30 bytes of general purpose nonvolatile memory APPLICATIONS Mechanical Potentiome...4 1/2 DC CHARACTERISTICS POTENTIOMETER DIVIDER MODE Specifications apply to all VRs Resolution In...
Description Audio digital potentiometers DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16
Nonvolatile Memory/ Dual 1024 Position Digital Potentiometers
RES MF 1/8W 160K 1% 2PPM
Nonvolatile Memory, Dual 1024 Position Digital Potentiometers

File Size 100.47K  /  10 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...(th) 4.8 5.5 3.4 4.6 0.4 1.6 6.2 3.9 5.3 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 50 A, Tj = 25 C VGE = 15 V, IC = 50 A, Tj = 125 C Zero gate voltage collector current ICES ...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...e space is at a premium. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE VISOL PD @ TC = ...4.0 6.0 A TJ = 25C See Fig. 15 VR = 200V 6.5 10 TJ = 125C 80 180 nC TJ = 25C See Fig. 220 600 TJ = 1...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ... * D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o ...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ... VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 100A Benefits * Increased operating efficiency * Direct mounting to heatsink * Pe...4.0 3.0 -- Units C/W N. m g www.irf.com 1 4/24/2000 GA100TS120U Electrical Characte...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ... VCES = 1200V VCE(on) typ. = 2.2V @VGE = 15V, IC = 125A Benefits * Increased operating efficiency * Direct mounting to heatsink * Pe...4.0 3.0 -- Units C/W N. m g www.irf.com 1 4/24/2000 GA125TS120U Electrical Characteri...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ... VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 50A Benefits * Increased operating efficiency * Direct mounting to heatsink * Per...4.0 3.0 -- Units C/W N. m g www.irf.com 1 4/24/2000 GA50TS120U Electrical Characteris...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ... VCES = 1200V VCE(on) typ. = 2.1V @VGE = 15V, IC = 75A Benefits * Increased operating efficiency * Direct mounting to heatsink * Per...4.0 3.0 -- Units C/W N. m g www.irf.com 1 4/24/2000 GA75TS120U Electrical Characteris...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximu...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximu...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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