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Intel, Corp.
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| Part No. |
21050
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| OCR Text |
21050 PCI-to-PCI Bridge Hardware Implementation
Application Note
August 1998
Order Number: 278032-001
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherw... |
| Description |
21050 - 21050 PCI-to-PCI Bridge Hardware Implementation Application Note 21050 - 21050 PCIPCI桥的硬件实现应用笔记
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| File Size |
82.96K /
15 Page |
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it Online |
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杭州士景电子有限公司
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| Part No. |
SC91650
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| OCR Text |
...no resistors connected t o v ss 21050 keyboard scanning pin sink current ikbs vn=2.5 note1 no resistors connected t o v ss 200 400 800 m a key-in debounce time t db -- -- 20 -- ms hfi pin input resistor rhfi v dd =2.5v -- 200 -- k w hfo... |
| Description |
13 MEMORY TONE / PULSE DIALER WITH REDIAL SAVE HANDFREE & HOLD FUNCTION
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| File Size |
439.71K /
30 Page |
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it Online |
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Renesas Electronics Corporation.
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| Part No. |
H7N1004LS
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| OCR Text |
....2003, page 5 of 11 1 5 20 100 21050 50 100 200 500 10 20 5 100 80 60 40 20 ?25 0 25 50 75 100 125 150 0 0.01 100 10 100 10 0.1 1 0.01 0.1 1 static drain to source on state resistance vs. drain current 25 c tc = ?25 c 75 c ds v = 1... |
| Description |
Silicon N-Channel MOSFET High-Speed Power Switching
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| File Size |
124.78K /
12 Page |
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it Online |
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Renesas
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| Part No. |
H7N1002LD H7N1002LM H7N1002LS
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| OCR Text |
...2, page 5 of 12 200 5 20 100 21050 5 10 20 50 1 2 0.5 0.01 100 10 100 10 0.1 1 0.02 0.1 1 static drain to source on state resistance vs. drain current 25 c tc = ? 25 c 75 c ds v = 10 v pulse test drain current i (a) drain ... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
132.20K /
14 Page |
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it Online |
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Fairchild Semiconductor Corporation
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| Part No. |
SMBH1G200US60
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| OCR Text |
...tor-emitter voltage v ce [v] 21050 0.05 0.1 1 t f t d(off) : tc = 25 & : tc = 125 & comon emitter vcc = 300v vge = 15v ic = 200a switching time t off , t f [ ] gate resistance r g [ + ] 21050 0.05 0.1 1 t r t d(on) ... |
| Description |
IGBT Module For Buck(Step Down) Converter(应用于补偿转换器的绝缘栅双极晶体IGBT)模块)
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| File Size |
595.97K /
10 Page |
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it Online |
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Renesas
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| Part No. |
H7N1002AB
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| OCR Text |
...2003, page 5 of 9 200 5 20 100 21050 5 10 20 50 1 2 0.5 0.01 100 10 100 10 0.1 1 0.02 0.1 1 static drain to source on state resistance vs. drain current 25 c tc = ?25 c 75 c v ds = 10 v pulse test drain current i d (a) static drai... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
97.50K /
10 Page |
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it Online |
Download Datasheet |
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