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  2mx16 Datasheet PDF File

For 2mx16 Found Datasheets File :: 170    Search Time::2.063ms    
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    MR27V3266D

OKI[OKI electronic componets]
Part No. MR27V3266D
OCR Text ...t Memory Cell Array 1Mx32 or 2mx16 Column Decoder Column Address Latch A0 | A12 Address Buffer Column Select Sence Amplifier & Program Bias CS RAS CAS MR WORD Mode Register Burst Sequence Controller Command Controller ...
Description 2M x16 / 1M x32 Synchronous OTP ROM

File Size 231.78K  /  36 Page

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    K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4D261638F K4D261638F-TC50 K4D261638 K4D261638F-TC2A K4D261638F-TC36 K4D

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
Part No. K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4D261638F K4D261638F-TC50 K4D261638 K4D261638F-TC2A K4D261638F-TC36 K4D261638F-TC250 K4D261638F-LC250
OCR Text ... Register Serial to parallel 2mx16 Output Buffer 2-bit prefetch Sense AMP Refresh Counter Row Buffer Row Decoder 2mx16 2mx16 2mx16 32 16 x16 DQi Address Register CK,CK ADDR Column Decoder LCBR LRAS Col. Buffer Latency ...
Description 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66

File Size 223.53K  /  18 Page

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    HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V281620ETP-5 HY57V281620ETP-6 HY57V281620ETP-H HY57V281620ELT-7 HY57V2816

HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V281620ETP-5 HY57V281620ETP-6 HY57V281620ETP-H HY57V281620ELT-7 HY57V281620ELTP-7 HY57V281620ELTP-H HY57V281620ET HY57V281620ET-5 HY57V281620ET-7 HY57V281620ETP-7 HY57V281620ELT-6 HY57V281620ELT-H HY57V281620ELTP-5 HY57V281620ELTP-6 HY57V281620ET-6 HY57V281620ET-H
OCR Text ...er CLK CKE State Machine 2mx16 BANK 3 Row Active Row Pre Decoder 2mx16 BANK 2 2mx16 BANK 1 2mx16 BANK 0 DQ0 I/O Buffer & Logic Sense AMP & I/O Gate X-Decoder X-Decoder X-Decoder X-Decoder CS RAS CAS WE U/LDQM Refres...
Description SDRAM - 128Mb
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54

File Size 119.76K  /  13 Page

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    Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
Part No. HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-HI HY57V281620AT-SI HY57V281620ALT-SI HY57V281620ALT-I HY57V281620AT-I
OCR Text ...a n k 2 X decoders CKE 2mx16 Bank 1 X decoders CS 2mx16 Bank 0 State Machine X decoders RAS DQ0 DQ1 Sense AMP & I/O Gate X decoders I/O Buffer & Logic CAS refresh Memory Cell Array WE Co...
Description 4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M

File Size 78.25K  /  11 Page

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    HYNIX
Part No. HY57V28162 HY57V281620HCT HY57V281620HCLT
OCR Text ...w counter CLK Row active 2mx16 Bank 3 Row Pre Decoders 2mx16 Bank 2 X decoders X decoders 2mx16 Bank 1 2mx16 Bank 0 X decoders DQ0 DQ1 I/O Buffer & Logic Sense AMP & I/O Gate CKE CS RAS CAS WE UDQM LDQM State Machine Address bu...
Description 8Mx16|3.3V|4K|6|SDR SDRAM - 128M
4 Banks x 2M x 16bits Synchronous DRAM

File Size 206.91K  /  14 Page

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    K1S321611C K1S321611C-FI70 K1S321611C-I

Samsung Semiconductor Co., Ltd.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K1S321611C K1S321611C-FI70 K1S321611C-I
OCR Text 2mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 ...
Description 2mx16 bit Uni-Transistor Random Access Memory 2mx16位统一晶体管随机存取存储器

File Size 178.12K  /  10 Page

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    K1S32161CC K1S32161CC-FI70 K1S32161CC-I

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K1S32161CC K1S32161CC-FI70 K1S32161CC-I
OCR Text 2mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft Draft Date July 14, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics...
Description 2mx16 bit Page Mode Uni-Transistor Random Access Memory

File Size 184.44K  /  10 Page

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    K1S3216B1C K1S3216B1C-I

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K1S3216B1C K1S3216B1C-I
OCR Text 2mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0 - Changed Standby Current(CMOS) from 80uA to 100uA ...
Description 2mx16 bit Uni-Transistor Random Access Memory

File Size 179.11K  /  10 Page

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    HY57V281620HCT-HI HY57V281620HCLT-8I

Hynix Semiconductor
Part No. HY57V281620HCT-HI HY57V281620HCLT-8I
OCR Text ...w counter CLK Row active 2mx16 Bank 3 Row Pre Decoders 2mx16 Bank 2 X decoders 2mx16 Bank 1 X decoders 2mx16 Bank 0 X decoders DQ0 DQ1 I/O Buffer & Logic Sense AMP & I/O Gate CKE CS RAS CAS WE UDQM LDQM State Machine Address bu...
Description SDRAM|4X2mx16|CMOS|TSOP|54PIN|PLASTIC
From old datasheet system
SDRAM,4X2mx16,CMOS,TSOP,54PIN,PLASTIC

File Size 139.21K  /  11 Page

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    HY57V281620HCT-H HY57V281620HCLT-K

Hynix Semiconductor
Part No. HY57V281620HCT-H HY57V281620HCLT-K
OCR Text ...w counter CLK Row active 2mx16 Bank 3 Row Pre Decoders 2mx16 Bank 2 X decoders 2mx16 Bank 1 X decoders 2mx16 Bank 0 X decoders DQ0 DQ1 I/O Buffer & Logic Sense AMP & I/O Gate CKE CS RAS CAS WE UDQM LDQM State Machine Address bu...
Description SDRAM|4X2mx16|CMOS|TSOP|54PIN|PLASTIC
From old datasheet system
SDRAM,4X2mx16,CMOS,TSOP,54PIN,PLASTIC

File Size 175.36K  /  13 Page

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For 2mx16 Found Datasheets File :: 170    Search Time::2.063ms    
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