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TOSHIBA
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Part No. |
2sc3279
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OCR Text |
2sc3279 2003-03-25 1 toshiba transistor silicon npn epitaxial type (pct process) 2sc3279 strobe flash applications medium power amplifier applications high dc current gain and excellent h fe linearity : h fe (1) = 1... |
Description |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
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File Size |
87.03K /
3 Page |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
2sc3279 E000814 SC3279 2SC3269
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OCR Text |
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Description |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
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File Size |
149.60K /
2 Page |
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it Online |
Download Datasheet
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2sc3279 Found Datasheets File :: 16 Search Time::1ms Page :: | <1> | 2 | |
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