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  2sc5191 Datasheet PDF File

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    2SC5191 2SC5191-T1 2SC5191-T2

NEC Corp.
NEC[NEC]
Part No. 2sc5191 2sc5191-T1 2sc5191-T2
OCR Text 2sc5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES * Low Voltage Operation, Low Phase Distortion * Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2...
Description ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

File Size 55.92K  /  12 Page

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    C5191

NEC
Part No. C5191
OCR Text 2sc5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES www.DataSheet4U.com* Low Voltage Operation, Low Phase Distortion PACKAGE DRAWINGS (Unit: mm) 2.80.2 0.4 +0.1 -0.05 * Low Noise NF = 1.5 dB TYP. @ V...
Description Search --To 2sc5191

File Size 91.02K  /  12 Page

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    NEC Corp.
NEC[NEC]
Part No. NE68839R-T1 NE688 NE68800 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1
OCR Text ...5 19 NE68830 2SC5193 30 NE68833 2sc5191 33 fT fT NFMIN NFMIN |S21E|2 |S21E|2 hFE ICBO IEBO CRE4 PT RTH(J-A) Gain Bandwidth Product at VCE = 1V, IC = 3 mA, f = 2.0 GHz Gain Bandwidth Product at VCE = 3V, IC = 20 mA, f = 2.0 GHz Minimum Noise...
Description SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

File Size 228.13K  /  19 Page

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    Duracell
Part No. NE68833-A NE68839-A NE68819-T1-A NE68833-T1-A NE68830-T1-A
OCR Text ... number 2sc5194 2sc5195 2sc5193 2sc5191 2sc5192/92r package outline 18 19 30 33 39 symbols parameters and conditions units min typ max min typ max min typ max min typ max min typ max f t gain bandwidth product at v ce = 1v, i c = 3 ma, f ...
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    California Eastern Laboratories
Part No. NE68818-T1-A NE68819-T1-A NE68833-T1-A
OCR Text ... number 2sc5194 2sc5195 2sc5193 2sc5191 2sc5192/92r package outline 18 19 30 33 39 symbols parameters and conditions units min typ max min typ max min typ max min typ max min typ max f t gain bandwidth product at v ce = 1v, i c = 3 ma, f ...
Description SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

File Size 352.43K  /  20 Page

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    CEL[California Eastern Labs]
Part No. NE68819-T1-A NE68839R-T1 NE688 NE68800 NE68818-T1-A NE68830-T1-A NE68833-T1-A NE68839-T1-A
OCR Text ...5 19 NE68830 2SC5193 30 NE68833 2sc5191 33 fT fT NFMIN NFMIN |S21E|2 |S21E|2 hFE ICBO IEBO CRE4 PT RTH(J-A) Gain Bandwidth Product at VCE = 1V, IC = 3 mA, f = 2.0 GHz Gain Bandwidth Product at VCE = 3V, IC = 20 mA, f = 2.0 GHz Minimum Noise...
Description SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

File Size 324.21K  /  20 Page

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