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C1907 TSP064CL MMBT555 24HCC 028100 W10J4 MAX68 IDM25SH5
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  30J Datasheet PDF File

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    30JL2C41 30JL2C4106

Toshiba Semiconductor
Part No. 30JL2C41 30JL2C4106
Description 30 A, 600 V, SILICON, RECTIFIER DIODE
SWITCHING MODE POWER SUPPLY APPLICATON

File Size 285.23K  /  4 Page

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HUA FENG CIRCUIT





    GT30J12106

Toshiba Semiconductor
Part No. GT30J12106
Description Silicon N Channel IGBT High Power Switching Applications

File Size 177.50K  /  6 Page

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    TOSHIBA
Part No. MG30J6ES50
Description GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

File Size 91.68K  /  3 Page

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    GT30J10106 GT30J101

Toshiba Semiconductor
Part No. GT30J10106 GT30J101
Description Silicon N Channel IGBT High Power Switching Applications

File Size 189.08K  /  6 Page

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    FDMA1430JP

Fairchild Semiconductor
Part No. FDMA1430JP
Description Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A

File Size 203.42K  /  8 Page

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    APT8030JVR

ADPOW[Advanced Power Technology]
Part No. APT8030JVR
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 67.66K  /  4 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. CY27H010-30JCT CY27H010-30PI CY27H010-45JIR
Description 128K X 8 OTPROM, 30 ns, PQCC32
128K X 8 OTPROM, 30 ns, PDIP32
128K X 8 OTPROM, 45 ns, PQCC32

File Size 214.04K  /  8 Page

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Part No. MSC30430JT
Description 1 ELEMENT, 43 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR

File Size 56.41K  /  3 Page

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    TRW INC
Part No. TDC1030J6A
Description 64 X 9 OTHER FIFO, 65 ns, CDIP28

File Size 428.82K  /  14 Page

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    D30JCT120V

Shindengen Electric Mfg.Co.Ltd
Part No. D30JCT120V
Description Bridge Diode

File Size 166.62K  /  4 Page

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Part: 30J6P41
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    50: $21.05
  100: $19.99
1000: $18.94

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