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  4mx8-bit Datasheet PDF File

For 4mx8-bit Found Datasheets File :: 79    Search Time::2.422ms    
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    HY27UF081G HY27UF081G2M-V HY27UF081G2M-VCB HY27UF081G2M-F HY27UF081G2M-TCS HY27UF081G2M-TEP HY27UF081G2M-TIB HY27LF081G2

HYNIX[Hynix Semiconductor]
Part No. HY27UF081G HY27UF081G2M-V HY27UF081G2M-VCB HY27UF081G2M-F HY27UF081G2M-TCS HY27UF081G2M-TEP HY27UF081G2M-TIB HY27LF081G2M-TCP HY27LF081G2M-TEB HY27LF081G2M-TES HY27LF081G2M-TIP HY27LF081G2M-TMB HY27UF081G2M-T HY27UF081G2M-TCP HY27UF081G2M-TEB HY27UF081G2M-TES HY27UF081G2M-TIP HY27UF081G2M-TIS HY27UF081G2M-TMB HY27UF081G2M-TMP HY27UF081G2M-TMS HY27UF081G2M-TPCP HY27UF081G2M-TPCS HY27UF081G2M-TPEB HY27UF081G2M-TPIP HY27UF081G2M-TPIS HY27UF081G2M-TPMB HY27UF081G2M-TPMP HYB27UF081GB2M-T HYB27UF081GB2M-TCB HYB27UF081GB2M-TCP HYB27UF081GB2M-TCS HYB27UF081GB2M-TEB HYB27UF081GB2M-TEP HYB27UF081GB2M-TES HYB27UF081GB2M-TIP HYB27UF081GB2M-TIS HYB27UF081GB2M-TMP HYB27UF081GB2M-TPCS HYB27UF081GB2M-TPEB HYB27UF081GB2M-TPEP HYB27UF081GB2M-TPES HYB27UF081GB2M-TPIP HYB27UF081GB2M-TPIS HYB27UF081GB2M-TPMP HYB27UF081GB2M-TPMS HYB27UF081GB2M-V HYB27UF081GB2M-VCB HYB27UF081GB2M-VCP HYB27UF081GB2M-VCS HY27UF081G2M-TCB HY27UF081G2M HY27UF081G2M-TPCB HY27UF081G2M-VCP HY27UF081G2M-TPEP HY27UF081G2M-TPES HY27UF081G2M-TPMS HY27UF081G2M-TPIB HY27LF081G2M-TCS HY27LF081G2M-TPCP HY27LF081G2M-VCP HY27LF081G2M-VEB HY27LF081G2M-VEP HY27LF081G2M-TCB HY27LF081G2M-TEP HY27LF081G2M-TIB HY27LF081G2M-TIS HY27LF081G2M-TMP
OCR Text ...eries is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is d...
Description 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

File Size 474.55K  /  48 Page

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    KM23V32005BG

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM23V32005BG
OCR Text 4Mx8 /2Mx16) CMOS MASK ROM FEATURES * Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) * Fast access time Random Acc...bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.(See mode selection ...
Description 32M-Bit (4Mx8/2Mx16) COMS MASK ROM

File Size 86.07K  /  5 Page

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    TDA7500A 8141

STMicroelectronics
Part No. TDA7500A 8141
OCR Text ...External Memory Interface SRAM 4Mx8 DRAM 128kx4 RDS Filter Demod. SPI Error corr. RDS blocks or RDS clk, dat, qual RDS RDS bit/blk Int. 4 RDS SPI 4 10 word SPI 1 receive stack 2ch Sample Rate Converter 4 3 2 8+3 17 P c...
Description DIGITAL AM/FM SIGNAL PROCESSOR
From old datasheet system

File Size 358.22K  /  40 Page

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    HY5DU281622DLT HY5DU281622DLT-X HY5DU281622DT HY5DU281622DT-X HY5DU28822DLT HY5DU28822DLT-X HY5DU28822DT HY5DU28822DT-X

Hynix Semiconductor
Part No. HY5DU281622DLT HY5DU281622DLT-X HY5DU281622DT HY5DU281622DT-X HY5DU28822DLT HY5DU28822DLT-X HY5DU28822DT HY5DU28822DT-X HY5DU28422DLT HY5DU28422DLT-X HY5DU28422DT HY5DU28422DT-X HY5DU288DT-J HY5DU281622DT-L HY5DU288DT-L HY5DU288DT-M HY5DU288DT-K HY5DU281622DT-D4
OCR Text ...WE DM Mode Register Row Decoder 4Mx8/Bank3 Command Decoder Bank Control 8 Input Buffer DS 4Mx8/Bank0 2-bit Prefetch Unit Sense AMP Output Buffer 4Mx8/Bank1 4Mx8/Bank2 16 8 Column Decoder DQS A0~A11 CLK_DLL Address Buffer B...
Description DDR SDRAM - 128Mb
128MB-S DDR SDRAM

File Size 393.77K  /  33 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5A3280YBC-T855 K5A3280YTC-T755 K5A3280YBC-T755 K5A3X80YTC K5A3380YBC-T855 K5A3380YTC-T855
OCR Text 4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Dra...Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM FEATURES * Power S...
Description MCP MEMORY

File Size 620.40K  /  45 Page

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    AMICC[AMIC Technology]
Part No. A82DL3234TG-70 A82DL32X4T A82DL3224 A82DL3224TG-70 A82DL3224TG-70F A82DL3224TG-70I A82DL3224TG-70IF A82DL3224TG-70U A82DL3224TG-70UF A82DL3224UG-70 A82DL3224UG-70F A82DL3224UG-70I A82DL3224UG-70IF A82DL3224UG-70U A82DL3224UG-70UF A82DL3234 A82DL3234TG-70F A82DL3234TG-70I A82DL3234TG-70IF A82DL3234TG-70U A82DL3234TG-70UF A82DL3234UG-70 A82DL3234UG-70F A82DL3234UG-70I A82DL3234UG-70IF A82DL3234UG-70U A82DL3234UG-70UF A82DL3244 A82DL3244TG-70 A82DL3244TG-70F A82DL3244TG-70I A82DL3244TG-70IF A82DL3244TG-70U A82DL3244TG-70UF A82DL3244UG-70 A82DL3244UG-70F A82DL3244UG-70I A82DL3244UG-70IF A82DL3244UG-70U A82DL3244UG-70UF
OCR Text 4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CM...
Description Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash

File Size 929.30K  /  60 Page

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    SAMSUNG
Part No. K5A3280YBA
OCR Text 4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 1.0 Initial Draft Fi...Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM FEATURES * Power S...
Description 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM

File Size 557.59K  /  47 Page

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    HY5DU28822BT-X HY5DU28822BT HY5DU28822BLT-X HY5DU28822BLT HY5DU28422BLT HY5DU28422BLT-X HY5DU28422BT HY5DU28422BT-X HY5D

HYNIX[Hynix Semiconductor]
Part No. HY5DU28822BT-X HY5DU28822BT HY5DU28822BLT-X HY5DU28822BLT HY5DU28422BLT HY5DU28422BLT-X HY5DU28422BT HY5DU28422BT-X HY5DU28422BT-H HY5DU28822BT-H HY5DU28422BT-J HY5DU28822BT-J HY5DU28422BT-M HY5DU28822BT-M HY5DU28422BT-K HY5DU28822BT-K HY5DU28822BT-L
OCR Text ...DM Bank Control Command Decoder 4Mx8/Bank0 Sense AMP 4Mx8/Bank1 4Mx8/Bank2 4Mx8/Bank3 Mode Register Row Decoder 16 8 Input Buffer Output Buffer 8 DS 2-bit Prefetch Unit DQ [0:7] Column Decoder ADD BA0,BA1 DQS Address...
Description DDR SDRAM - 128Mb
128M-S DDR SDRAM

File Size 329.98K  /  33 Page

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    HYNIX
Part No. HY27LF081G2M-TCB
OCR Text ...eries is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is d...
Description 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

File Size 479.08K  /  49 Page

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    HY27SF081G2M

Hynix Semiconductor
Part No. HY27SF081G2M
OCR Text ...eries is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is d...
Description (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

File Size 417.53K  /  47 Page

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For 4mx8-bit Found Datasheets File :: 79    Search Time::2.422ms    
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