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  5.8-17ghz Datasheet PDF File

For 5.8-17ghz Found Datasheets File :: 88    Search Time::19.422ms    
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    EIC1314-8

Excelics Semiconductor, Inc.
Part No. EIC1314-8
OCR Text 5 GHz 8-Watt Internally Matched Power FET FEATURES * * * * * * 13.75- 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 24% Power Added Efficiency ...
Description 13.75-14.5 GHz 8-Watt Internally Matched Power FET

File Size 164.78K  /  4 Page

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    United Monolithic Semic...
Part No. CHA3666 CHA3666-15
OCR Text ... db d g gain flatness 0.5 db nf noise figure (2) 1.8 2 db is11i input return loss (2) 2.5:1 2.7:1 db is22i ouput return loss (2) 2.0:1 2.2:1 db ip3 3rd order intercept point (2) 26 dbm p1db outpu...
Description 6-17GHz Low Noise Amplifier

File Size 168.16K  /  8 Page

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    CHA3666

United Monolithic Semiconductors
Part No. CHA3666
OCR Text ...plifier Min 6 19 Typ 21 0.5 1.8 2.5:1 2.0:1 26 Max 17 Unit GHz dB dB 2 2.7:1 2.2:1 dB dB dB dBm dBm V Output power at 1dB gain comp.(2) (3) Drain bias voltage Drain bias current 15 17 4 60 80 100 mA ...
Description 6-17GHz Low Noise Amplifier

File Size 243.97K  /  8 Page

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    United Monolithic Semic...
Part No. CHE1260
OCR Text ...-8 db vdc bias voltage 4.5 v idc bias current (on ports dc_i or dc_r) 25 33 45 m a these values are representative of on-wafer measure ments that are made without bonding wires at the rf ports but with 100k w resistor...
Description    10-27GHz Bidirectionnal Detector

File Size 564.13K  /  10 Page

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    FLL21E004ME

Eudyna Devices Inc
Part No. FLL21E004ME
OCR Text ...8V f=2.17GHz IDS(DC)=50mA -0.1 -5 35.0 13.0 - Limit Typ. Max. -0.2 36.0 14.0 40 7.0 -0.5 8.0 Unit V V dBm dB % oC G.C.P.:Gain Compression Point Edition 1.4 Mar. 2004 1 FLL21E004ME High Voltage - High Power GaAs FET Ou...
Description High Voltage - High Power GaAs FET

File Size 248.36K  /  6 Page

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    FLL21E010MK

Eudyna Devices Inc
Part No. FLL21E010MK
OCR Text ... Condition Rating 32 -3 41.5 -65 to +175 200 Unit V V W oC oC VDS VGS Tc=25oC Pt Tstg Tch RECOMMENDED OPERATING CONDITION (C...8 6 Scale for |S21| 5 4 3 2. 0 0 0.3 0.4 -90 Scale for |S 12| S 12 S 21 !...
Description High Voltage - High Power GaAs FET

File Size 304.62K  /  6 Page

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    CHA3666-QAG

United Monolithic Semiconductors
Part No. CHA3666-QAG
OCR Text 5.8-17ghz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process:...
Description 5.8-17ghz Low Noise Amplifier

File Size 312.92K  /  12 Page

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    CHE1260-QAG

United Monolithic Semiconductors
Part No. CHE1260-QAG
OCR Text ...20 to 2200 20 to 2200 -12 -12 4.5 33 dB dB V A mV mV These values are representative of on board measurements as defined page 8, with 100k resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and Vref_R (see notes, page 9). Absolute Ma...
Description 12-27GHz Bidirectionnal Detector

File Size 781.90K  /  10 Page

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    CHR2291-99F_00 CHR2291

United Monolithic Semicondu...
UMS[United Monolithic Semiconductors]
Part No. CHR2291-99F_00 CHR2291
OCR Text ...ncy range Conversion gain 12 5.25 0.25 +10 17 7.75 1.5 GHz GHz GHz dB ESD Protection : Electrostatic discharge sensitive device....8 2.0:1 2.0:1 100 LO VSWR Input LO VSWR (1) RF VSWR Input RF VSWR (1) Id Bias current (2) mA ...
Description 12-17GHz Integrated Down Converter

File Size 119.75K  /  6 Page

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