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  50-60w Datasheet PDF File

For 50-60w Found Datasheets File :: 1166    Search Time::1.5ms    
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    2SA1124

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1124
OCR Text ...5C) Ratings -150 -150 -5 -100 -50 1 150 -55 ~ +150 Unit V V 3.2 0.45-0.1 1.27 1.27 +0.2 13.50.5 Satisfactory foward current transfe...60W output amplifier. 2.540.15 0.7-0.2 +0.3 0.70.1 8.60.2 s Features 0.45-0.1 ...
Description Silicon PNP epitaxial planer type

File Size 35.68K  /  2 Page

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    2SD1211

Panasonic Semiconductor
Part No. 2SD1211
OCR Text ...EO VEBO ICP IC PC Tj Tstg 13.50.5 s Absolute Maximum Ratings 0.7-0.2 0.70.1 8.60.2 0.45-0.1 +0.2 s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer r...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 36.83K  /  2 Page

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ...ctor current VGE(th) ICES I C = 50 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Tran...60W 1 40W 1 20W 1 00W 80W 60W 40W 20W 0W 25 C 50C 75 C 100 C 1 25C 30A IC, COLLECTOR CURRENT ...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text ...ns 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 16) RG, GATE RESISTOR Figure 10. Typical sw...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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    BUZ104L C67078-S1358-A2 BUZ104LE3046

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BUZ104L C67078-S1358-A2 BUZ104LE3046
OCR Text ...in 3 S Type BUZ 104L VDS 50 V ID 17.5 A RDS(on) 0.1 Package TO-220 AB Ordering Code C67078-S1358-A2 Maximum Ratings...60W l kj iV GS [V] 0.24 a 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 ID 32 28 24 ...
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) SIPMOS功率晶体管(N通道增强模式雪崩额定逻辑电平dv /额定的胸苷低电阻
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor

File Size 210.09K  /  9 Page

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    BUZ104 C67078-S1353-A2 BUZ104E3045 BUZ104E3045A BUZ104E3046 BUZ104E3111

SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BUZ104 C67078-S1353-A2 BUZ104E3045 BUZ104E3045A BUZ104E3046 BUZ104E3111
OCR Text ...BUZ 104 Pin 2 D Pin 3 S VDS 50 V ID 17.5 A RDS(on) 0.1 Package TO-220 AB Ordering Code C67078-S1353-A2 Maximum Ratings...60W l k j VGS [V] a b c d e f g h RDS (on) 0.24 ID 32 28 24 ...
Description N-Channel SIPMOS Power Transistor
From old datasheet system
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

File Size 208.39K  /  9 Page

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    BYV541V BYV541V-200 BYV54V BYV54V-200

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. BYV541V BYV541V-200 BYV54V BYV54V-200
OCR Text ...r Per diode Per diode Value 100 50 1000 - 40 to + 150 - 40 to + 150 Unit A A A C C tp=10ms Per diode sinusoidal Symbol VRRM Paramet...60W I F(av)(A) =tp/T tp 0 0 5 10 15 20 25 30 35 40 45 50 ...
Description Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes 高效快速恢复整流二极管
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Color:White; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

File Size 55.57K  /  5 Page

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    FS2UM-12

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS2UM-12
OCR Text ...D = 1A, VGS = 10V, RGEN = RGS = 50 IS = 1A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER D...60W TC = 25C Pulse Test VGS = 20V 10V 8V 6V 2 2.0 DRAIN CURRENT ID (A) 4 DRAIN CURRENT ID (...
Description HIGH-SPEED SWITCHING USE

File Size 41.88K  /  4 Page

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    FS3UM-10 FS3UM

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS3UM-10 FS3UM
OCR Text ...D = 1A, VGS = 10V, RGEN = RGS = 50 IS = 1A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DI...60W tw=10s 80 DRAIN CURRENT ID (A) 100s 1ms 10ms DC 60 40 20 0 0 50 10...
Description HIGH-SPEED SWITCHING USE

File Size 41.95K  /  4 Page

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    HBT060ZGHH HBT060ZGHH-A

POWER-ONE[Power-One]
Part No. HBT060ZGHH HBT060ZGHH-A
OCR Text ...at no load) Transient Response (50% to 100% Load Step, Symbol Vo1 Vo2 Vo3 Io1 Io2 Io3 Min - Typ 125 150 150 16 6.5 6.5 Max 2...60W, Tbp=40C) Min 86 - Typ 87.5 900 Max - Units % kHrs Table 9. Physical Paramete...
Description HBT Series . Half-Brick DC/DC Converter 48V Input 60 Watt Triple Output

File Size 112.57K  /  12 Page

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