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http:// CET[Chino-Excel Technology]
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Part No. |
CEP80N75 CEB80N75 CEF80N75
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OCR Text |
... g VSD VGS = 0V, IS = 75A VDS = 60V, ID = 75A, VGS = 10V Test Condition VGS = 0V, ID = 250A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 40A 2 10 Min 75 1 100 -100 4 13 Typ Max Units V
A... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
394.17K /
4 Page |
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Advanced Power Electronics
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Part No. |
AP75N07GP
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OCR Text |
...ge current (t j =150 o c) v ds =60v , v gs =0v - - 100 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =40a - 83 130 nc q gs gate-source charge v ds =60v - 10 - nc q gd gate-drain ("miller") charge v gs =4.5v ... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
201.51K /
5 Page |
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it Online |
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