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  740 200 Datasheet PDF File

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    EPD-740-5-0.5

EPIGAP optoelectronic GmbH
Part No. EPD-740-5-0.5
OCR Text 740-5-0.5 rev. 02 Case 5 mm plastic lens Description 9,15 1 Anode 5,75 - 0,3 0,8 - 0,4 Selective photodiode mounted in standard ...200 7.2x10 120 170 2,5 -15 12 200 pA nm A/W 770 nm nm G W/ Hz cm Hz W -1 5.7x1...
Description Photodiode

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    ELD-740-544-2

EPIGAP optoelectronic GmbH
Part No. ELD-740-544-2
OCR Text 740-544-2 rev. 03 Case 5 mm plastic lens Description High-power, high-speed infrared LED in standard 5 mm package, wide beam angle, hous...200 140 -20 to +80 -55 to +100 100 Unit mA mA mW C C C Optical and Electrical Characteristics Ta...
Description LED - Lamp

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    EPC-740-0.9

EPIGAP optoelectronic GmbH
Part No. EPC-740-0.9
OCR Text ...7 Technology AlGaAs/GaAs EPC-740-0.9 rev. 04/07 Electrodes P (anode) up typ. dimensions (m) 860 800 720 typ. thickness 300 (20) m...200 pA A/W nm 770 nm nm pF ns Measured on bare chip on TO-18 header information only ...
Description Photodiode-Chip

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    EPD-740-9-0.4

EPIGAP optoelectronic GmbH
Part No. EPD-740-9-0.4
OCR Text 740-9-0.4 6/28/2007 rev. 01/07 Case TOPLED Type SMD Technology AlGaAs/AlGaAs Wavelength Infrared Description 2,8 0,2 2,2 0,1 Cath...200 pA A/W VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 740 nm = 740 nm VR = 0 V VR = 5 V VR = 0 ...
Description Photodiode

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    EPD-740-5-0.9

EPIGAP optoelectronic GmbH
Part No. EPD-740-5-0.9
OCR Text 740-5-0.9 6/28/2007 rev. 02/07 Case 5 mm plastic lens Type water clear Technology AlGaAs/GaAs Wavelength Infrared 9 - 0,5 1,1 - 0,1 ...200 pA nm A/W 770 nm nm G W/ Hz cm Hz W -1 1.1x1013 pF ns A for information ...
Description Photodiode

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    EPC-740-0.5

EPIGAP optoelectronic GmbH
Part No. EPC-740-0.5
OCR Text ...7 Technology AlGaAs/GaAs EPC-740-0.5 rev. 04/07 Electrodes P (anode) up 460 360 300 typ. dimensions (m) typ. thickness 300 (20)...200 pA A/W nm 770 nm nm pF ns Measured on bare chip on TO-18 header information only ...
Description Photodiode-Chip

File Size 48.69K  /  2 Page

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    AZ100LVEL16VRL

Arizona Microtek, Inc
Part No. AZ100LVEL16VRL
OCR Text ...igh voltage d / d - 1165 - 740 - 1165 - 740 - 1165 - 740 - 1165 - 740 mv input high voltage en , sel - 1165 v cc - 1165 v cc - 1165 v cc - 1165 v cc mv v il input low voltage d/ d - 1900 - 1475...
Description Dual Frequency PECL/ECL Oscillator Gain Stage & Buffer with Enable

File Size 458.42K  /  9 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M54128FP M54128L M54128
OCR Text ...0 -70 - Limits Typ. 820 840 810 740 740 760 740 -0.07 13.9 7.5 2 2.7 1.2 4.6 - 2.4 - -0.06 - 2.4 - -0.06 6.5 -4.0 -4.0 2.4 0.01 0.06 120 7.2...200 400 600 800 1000 1200 "L" output current (A) SCRT "L" Output Voltage vs. "L...
Description EARTH LEAKAGE CURRENT DETECTOR

File Size 233.61K  /  15 Page

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    Philips
Part No. MX1011B700Y
OCR Text ...V) 50 50 50 50 PL (W) 650; typ. 740 typ. 650 typ. 300 typ. 700 GP (dB) 6.0; typ. 7 typ. 6.4 typ. 7 typ. 6.7 C (%) 48; typ. 55 typ. 45 typ. 4...200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Phil...
Description NPN microwave power transistor

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    LTC6948-4

Linear Technology
Part No. LTC6948-4
OCR Text ...tc6948-4 o_ div = 1 2.240 to 3.740 3.080 to 4.910 3.840 to 5.790 4.200 to 6.390 o_ div = 2 1.120 to 1.870 1.540 to 2.455 1.920 to 2.895 2.100 to 3.195 o_ div = 3 0.747 to 1.247 1.027 to 1.637 1.280 to 1.930 1.400 to 2.130 o_ div...
Description Ultralow Noise 0.37GHz to 6.39GHz Fractional-N Synthesizer

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