760-0008-3 pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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760-0008-3 Datasheet PDF File

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					Samsung semiconductor Samsung Electronic
Part No.	K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text	... MIN 0.002 ( 0.50 ) 0.020 11.760.20 0.4630.008 #1 22.62 MAX 0.891 22.22 0.875 0.10 MAX 0.004 ( 0.71 ) 0.028 0.10 0.004 #27 0.21 0.008 0.05 0.002 1.00 0.039 0.10 0.004 0.30 -0.05 0.012 +0.004 -0.002 +0.10 ...
Description	64Mb H-die SDRAM Specification
File Size	142.04K / 14 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X4016C3F-TB70 K6X4016C3F-TF70
OCR Text	... 0.45 ~0.75 0.018 ~ 0.030 11.760.20 0.4630.008 10.16 0.400 ( 0.50 ) 0.020 #1 #22 1.000.10 0.0390.004 1.20 MAX. 0.047 0.15 0 + 0.1 5 - 0.0 04 + 0.0 6 .002 0.00 - 0 18.81 MAX. 0.741 18.410.10 0.7250.004 ( 0.805 ) 0.032 ...
Description	256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器
File Size	129.39K / 9 Page	View it Online	Download Datasheet

					http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 K6X8008C2B-TF55 K6X8008C2B-TF70 K6X8008C2B-TQ70 DS_K6X8008C2B
OCR Text	... 0.45 ~0.75 0.018 ~ 0.030 11.760.20 0.4630.008 10.16 0.400 ( 0.50 ) 0.020 #1 #22 1.000.10 0.0390.004 1.20 MAX. 0.047 0.15 0 0 + 0.1 5 - 0.0 .004 +0 02 .006 - 0.0 18.81 MAX. 0.741 18.410.10 0.7250.004 ( 0.805 ) 0.032 ...
Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM 1Mx8位低功耗和低电压的CMOS静态RAM
File Size	129.87K / 9 Page	View it Online	Download Datasheet

					STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	MTP3055E 3036 MTP3055
OCR Text	...ID = 6 A V GS = 0 Min. 4 Typ. 6 760 100 30 Max. Unit S pF pF pF 2/8 MTP3055E ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbo l t d(on) tr t d(of f) tf Qg Q gs Q gd Parameter Turn-on Time Rise Time Turn-off Dela...
Description	N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET -通道60V 0.1ohm - 12A条，220 STripFET MOSFET N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET N - CHANNEL 60V - 0.1 - 12A TO-220 STripFET TM MOSFET From old datasheet system
File Size	80.05K / 8 Page	View it Online	Download Datasheet

					AUK[AUK corp]
Part No.	STK830FC
OCR Text	....5 Unit V V A nA S 3.87 760 85 15 15 900 100 22 40 40 140 55 43 pF VDD=250V,ID=4.5A RG=12 16 66 22 ns VDS=400V,VGS=10V, ID=4.5A 33 4.4 16.6 nC Source-Drain Diode Ratings and Characteristics Characteristic ...
Description	Advanced Power MOSFET
File Size	454.05K / 8 Page	View it Online	Download Datasheet

					AUK[AUK corp]
Part No.	STK830F
OCR Text	....5 Unit V V A nA S 3.87 760 85 15 15 900 100 22 40 40 140 55 43 pF VDD=250V,ID=4.5A RG=12 16 66 22 ns VDS=400V,VGS=10V, ID=4.5A 33 4.4 16.6 nC Source-Drain Diode Ratings and Characteristics Characteristic ...
Description	Advanced Power MOSFET
File Size	500.70K / 8 Page	View it Online	Download Datasheet

					STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
Part No.	STP120NF10 STB120NF10 STB120NF10T4
OCR Text	...A ISD = 120 A VGS = 0 152 760 10 1.3 di/dt = 100A/s ISD = 120 A VDD = 40 V Tj = 150C (see test circuit, Figure 5) ()Pulsed: Pulse duration = 300 s, duty cycle ()Pulse width limited by safe operating area. Safe Operating ...
Description	N-CHANNEL 100V - 0.009 OHM - 120A D2PAK/TO-220 STRIPFET II POWER MOSFET N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET N沟道100V 0.009 120A条DPAK/TO-220 STripFET二功率MOSFET
File Size	392.57K / 10 Page	View it Online	Download Datasheet

					STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STP16NE06 STP16NE06FP 5315 P16NE
OCR Text	...z I D =8 A V GS = 0 Min. Typ. 6 760 100 30 1000 140 45 Max. Unit S pF pF pF 2/9 STP16NE06/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-...
Description	11 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel 60V-0.08Ω-16A- TO-220/TO-220FP STripFETTM Power MOSFET(N沟道功率MOSFET) N沟道60V0.08Ω- 16A条，TO-220/TO-220FP STripFETTM功率MOSFET（不适用沟道功率MOSFET的） N-CHANNEL Power MOSFET From old datasheet system N - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FP STripFET? POWER MOSFET N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
File Size	337.24K / 9 Page	View it Online	Download Datasheet

					TOSHIBA[Toshiba Semiconductor]
Part No.	TPCS8205 TPC8205
OCR Text	...3/4 3/4 3/4 3/4 3/4 60 40 30 10 760 110 130 7 Max 10 10 3/4 3/4 1.2 90 60 45 3/4 3/4 3/4 3/4 3/4 3/4 ns Fall time 13 3/4 S pF pF pF m Unit A A V V Turn-ON time Switching time 13 Turn-OFF time Total gate charge (gate-source plus gat...
Description	Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
File Size	288.86K / 7 Page	View it Online	Download Datasheet

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