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921 Datasheet PDF File

For 921 Found Datasheets File :: 1469 Search Time::1.5ms
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				STMicroelectronics
Part No.	PD57002-E PD57002S-E
OCR Text	...0.936 0.925 0.926 0.924 0.919 0.921 0.915 0.920 0.922 0.921 0.922 0.924 0.922 0.926 0.919 0.920 0.918 0.916 0.921 0.912 0.914 0.914 0.908 0.909 0.900 S11 -16 -31 -46 -59 -70 -80 -90 -98 -105 -112 -117 -122 -127 -131 -135 -138 -141 -145 -147...
Description	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
File Size	322.10K / 23 Page	View it Online	Download Datasheet

				Adam Technologies, Inc.
Part No.	MTJG-3-665X1 MTJG-2-66NX1 MTJG-3-885X1-SMT
OCR Text	...ailable in 6P6C or 8P8C Types .921 [23.40] .039 X .126 [1.00 X 3.20] .250 [6.35] .100 [2.54] .712 [18.10] .712 [18.10] .453 .453 .453 [11.50] [11.50] [11.50] .250 [6.35] .520 [13.20] .921 [23.40] .921 [23.40] .311 .311 [7.90...
Description	MODULAR TELEPHONE JACKS GANGED JACKS, THRU HOLE & SMT-TYPE 5, N
File Size	177.51K / 1 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF9100R3 MRF9100 MRF9100SR3
OCR Text	...lications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment. * On-Die Integrated Input Mat...
Description	GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
File Size	390.38K / 12 Page	View it Online	Download Datasheet

				United Chemi-Con, Inc.
Part No.	ESMM161VSN821MN45T ESMM181VSN681MN45T ESMM221VSN471MN45T ESMM3B1VSN271MN45T ESMM161VSN102MA25T ESMM181VSN102MA25T ESMM201VSN102MA30T ESMM221VSN102MA30T ESMM251VSN102MA35T ESMM161VSN391MN30T ESMM161VSN471MN30T ESMM181VSN331MN30T ESMM181VSN391MN30T ESMM201VSN331MN30T ESMM221VSN271MN30T ESMM251VSN271MN30T ESMM3B1VSN151MN30T ESMM161VSN821MA20T ESMM201VSN821MA25T ESMM251VSN102MR40T ESMM251VSN122MA35T ESMM251VSN122MR45T ESMM251VSN151MP20T ESMM251VSN152MA40T ESMM161VSN561MN35T ESMM181VSN471MN35T ESMM201VSN391MN35T ESMM201VSN471MN35T ESMM221VSN331MN35T ESMM251VSN331MN35T ESMM3B1VSN181MN35T ESMM3B1VSN221MN35T ESMM201VSN471MA20T ESMM221VSN471MA20T ESMM251VSN471MA20T ESMM3B1VSN271MA20T ESMM221VSN391MA20T ESMM251VSN391MA20T ESMM3B1VSN391MA25T ESMM161VSN102MP45T ESMM161VSN102MQ35T ESMM161VSN102MR30T ESMM161VSN122MA25T ESMM161VSN122MP50T ESMM161VSN122MQ40T ESMM161VSN122MR30T ESMM161VSN152MA30T ESMM161VSN152MQ50T ESMM161VSN152MR35T ESMM161VSN182MA35T ESMM3B1VSN101MP20T ESMM161VSN182MR40T ESMM161VSN222MA40T ESMM221VSN331MR20T ESMM251VSN331MR20T ESMM3B1VSN331MR25T ESMM161VSN222MR50T ESMM161VSN271MN25T ESMM161VSN271MP20T ESMM161VSN272MA45T ESMM161VSN331MN25T ESMM161VSN332MA50T ESMM161VSN391MP25T ESM
OCR Text	...30 P35 P35 P40 P50 Q20 Q25 0.921 0.753 0.638 0.529 0.444 0.366 0.303 0.921 0.638 0.529 0.444 0.366 0.303 0.249 0.207 0.638 0.529 0.444 0.366 0.303 0.249 0.207 0.166 0.444 0.366 0.303 0.249 0.207 0.166 0.138 0.113 0.366 0.303 0.249 0.207 ...
Description	Snap Mount
File Size	151.29K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S9045NBR1 MRF6S9045NR1 MRF6S9045NR108
OCR Text	...atts Avg., Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	701.09K / 18 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10149
OCR Text	921-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10149 is an internally matched 70-watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50% efficiency and 16 dB typical...
Description	70 Watts, 92160 MHz GOLDMOS Field Effect Transistor 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor
File Size	214.08K / 6 Page	View it Online	Download Datasheet

				Freescale Semiconductor... Freescale Semiconductor, Inc
Part No.	MRF6S9060MBR1 MRF6S9060MR1
OCR Text	...atts Avg., Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance...
Description	RF Power Field Effect Transistors
File Size	622.45K / 16 Page	View it Online	Download Datasheet

				Freescale Semiconductor... Freescale Semiconductor, Inc
Part No.	MRF6S9060N MRF6S9060NBR1 MRF6S9060NR1
OCR Text	...atts Avg., Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance...
Description	RF Power Field Effect Transistors
File Size	701.73K / 18 Page	View it Online	Download Datasheet

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