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CM531213 PS2651L2 FSL116LR LE2464C N60C3 AKD8181B 4998ET S1206
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    INA-03170

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HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-03170
OCR Text ... Id = 12 mA) Freq. GHz S11 Mag ang dB S21 Mag ang dB S12 Mag ang Mag S22 ang k 0.05 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 3.50 .35 .35 .34 .34 .33 .32 .32 .32 .31 .31 .30 .27 .15 .16 .28 178 176 172 164 ...
Description Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier

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    MGS-70008

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. MGS-70008
OCR Text ....04 .11 .17 .22 .32 .37 .46 S11 ang. -6.2 0.3 7.6 13.6 14.7 14.5 14.0 10.2 8.1 1.4 -3.2 -8.5 -13.1 -14.1 7.4 141.4 143.2 129.5 135.9 133.2 129.2 128.5 dB -.6 -.6 -.6 -.6 -.6 -.6 -.6 -.6 -.6 -.6 -.7 -.8 -.7 -.7 -.8 -1.1 -1.2 -1.4 -1.3 1.6 -2...
Description Reflective SPDT GaAs MMIC Switch(反射型单刀双掷砷化镓单片式微波集成电路开

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    Q62702-F1590 BFP450

Siemens Semiconductor Group
Part No. Q62702-F1590 BFP450
OCR Text ...arameters f GHz MAG S11 ang MAG S21 ang MAG S12 ang MAG S22 ang VCE = 2V, IC = 50mA 0.01 0.1 0.5 1 2 3 4 5 6 0.143 0.469 0.681 0.705 0.73 0.752 0.783 0.797 0.813 -30.7 -121.7 -172.4 173.1 154.7 139.5 124.1 112.5 1...
Description NPN Silicon RF Transistor (For medium power amplifiers)
From old datasheet system

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    TGA8035 TGA8035-SCC TGA8035---SCC

TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
Part No. TGA8035 TGA8035-SCC TGA8035---SCC
OCR Text ... Frequency (GHz) MAG S 11 ang( ) MAG S 21 ang( ) MAG S 12 ang( ) MAG S 22 ang( ) GAIN (dB) 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18....
Description    Gain Block Amplifier
Two - stage GaAs monolithic amplifier

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    TGS8422 TGS8422-SCC

TRIQUINT[TriQuint Semiconductor]
TriQuint Semiconductor,Inc.
Part No. TGS8422 TGS8422-SCC
OCR Text ...put 3 Frequency (GHz) MAG S 11 ang() MAG S 21 ang() MAG S 12 ang() MAG S 22 ang() In s e rtio n Lo s s (dB) 0 .5 1 .0 2 .0 3 .0 4 .0 5 .0 6 .0 7 .0 8 .0 9 .0 1 0 .0 1 1 .0 1 2 .0 1 3 .0 1 4 .0 1 5 .0 1 6 .0 1 7 .0 1 8 .0 0 .1 8 0...
Description SP4T FET Switch

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    UPA803 UPA803T UPA803T-T1

NEC[NEC]
Part No. UPA803 UPA803T UPA803T-T1
OCR Text ...8 .154 .158 .163 .167 .173 .179 ang -16.9 -34.4 -49.9 -63.2 -74.9 -83.6 -92.0 -99.2 -106.3 -113.2 -120.2 -127.0 -133.9 -140.6 -148.7 -155.8 -162.4 -168.8 -175.8 177.0 170.8 165.7 160.2 155.2 150.9 146.8 142.4 138.3 135.3 131.3 MAG 8.517 8.1...
Description NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

File Size 56.84K  /  8 Page

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    CLY32-00 CLY32-05 CLY32-10 CLY32

INFINEON[Infineon Technologies AG]
Part No. CLY32-00 CLY32-05 CLY32-10 CLY32
OCR Text ...2 k-Fact. S 21 /S 12 MAG [mag] [ang] [mag] [ang] [mag] [ang] [mag] [dB] [dB] 7,584 111 0,0330 36 0,403 -167 0,48 23,6 7,161 108 0,0339 34 0,410 -168 0,54 23,2 6,698 105 0,0348 33 0,419 -170 0,60 22,8 6,206 102 0,0357 31 0,428 -172 0,66 22,4...
Description Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET

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    MAX2650 MAX2650EUS-T

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX2650 MAX2650EUS-T
OCR Text ... FREQUENCY (GHz) S11 (mag) S11 (ang) S21 (dB) S21 (mag) S21 (ang) S12 (dB) S12 (mag) S12 (ang) S22 (mag) S22 (ang) K 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.50 4 0.17 0.17 0.16 0.14...
Description DC-to-Microwave / 5V Low-Noise Amplifier
DC-to-Microwave, 5V Low-Noise Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

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    MHW1345

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MHW1345
OCR Text ...S11 Mag -19.3 -15.6 -13.2 -11.1 ang 45.5 35.0 34.4 30.1 Mag 34.6 34.2 33.9 33.5 S21 ang -0.6 -56.7 -114 134 Mag -47.0 -47.5 -47.9 -48.3 S12 ang 2.3 -30.3 -62.9 -128 T = 25C Zo = 50 S22 Mag -14.5 -12.6 -10.8 -14.9 ang 76.8 45.0 10.7 -42....
Description GENERAL PURPOSE LINEAR AMPLIFIER MODULE 10 MHz - 200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
MHW1345 10-200 MHz, 34.5 dB, 800 mW General Purpose Linear Amplifier Module

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    Siemens
Part No. BFQ72
OCR Text ...C C 1.6 C f g opt ghz db db mag ang C db db f min g p ( f min ) r n nf 50 w g p ( f 50 w ) 0.01 0.8 1.5 2.3 C 14.7 ( z s = 90 w ) 99.5 C 16.5 C 0.31 1.7 2.45 C 14 0.26 bfq 72 circles of constant noise figure f = f ( z s ) in z s...
Description NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)

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