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  avalanche-rated Datasheet PDF File

For avalanche-rated Found Datasheets File :: 13965    Search Time::1.516ms    
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    STL150N3LLH508 STL150N3LLH5

STMicroelectronics
Part No. STL150N3LLH508 STL150N3LLH5
OCR Text ... low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses PowerFLATTM ( 6x5 ) Application Switching applic...rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe opera...
Description N-channel 30 V, 0.0014 Ω, 35 A - PowerFLAT (6x5) STripFET V Power MOSFET
N-channel 30 V, 0.0014 ヘ, 35 A - PowerFLAT⑩ (6x5) STripFET⑩ V Power MOSFET

File Size 488.60K  /  12 Page

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    IRF150

Intersil, Corp.
Intersil Corporation
Part No. IRF150
OCR Text ...evel of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regu...Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteris...
Description 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET 40 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
40A/ 100V/ 0.055 Ohm/ N-Channel Power MOSFET

File Size 57.37K  /  7 Page

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    PHX8ND50E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHX8ND50E
OCR Text Avalanche energy rated FEATURES * Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Isolated package * Fast reverse recovery diode PHX8ND50E SYMBOL d QUICK REFERE...
Description PowerMOS transistors FREDFET, Avalanche energy rated

File Size 56.56K  /  8 Page

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    PHX8N50E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHX8N50E
OCR Text Avalanche energy rated FEATURES * Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Isolated package PHX8N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID ...
Description PowerMOS transistors Avalanche energy rated

File Size 74.46K  /  8 Page

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    PHX7N40E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHX7N40E
OCR Text Avalanche energy rated FEATURES * Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Isolated package PHX7N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID ...
Description PowerMOS transistors Avalanche energy rated

File Size 55.83K  /  8 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BSL207SP
OCR Text ... * 150C operating temperature * Avalanche rated * dv/dt rated Product Summary VDS RDS(on) ID -20 41 -6 P-TSOP6-6 V m A 4 5 6 3 2 1 Type BSL207SP Package P-TSOP6-6 Ordering Code Q67042-S4066 Marking sPA Gate ...
Description OptiMOS -P Small-Signal-Transistor
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, TSOP-6

File Size 84.49K  /  8 Page

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    MUR4100ERL MUR480E MUR4100E MUR480ERL

ON Semiconductor
Part No. MUR4100ERL MUR480E MUR4100E MUR480ERL
OCR Text ...: http://onsemi.com * 20 mJ Avalanche Energy Guaranteed * Excellent Protection Against Voltage Transients in Switching * * * * * * Indu...Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction and Storage Temperature Rang...
Description SWITCHMODE Power Rectifiers
4A 1000V Ultrafast Rectifier , Package: Axial Lead, Pins=2

File Size 77.77K  /  8 Page

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    FDB8443

Fairchild Semiconductor
Part No. FDB8443
OCR Text ... VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RJA =...RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 LIMITED BY PACKA...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 287.85K  /  7 Page

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    FDD8444L

Fairchild Semiconductor
Part No. FDD8444L
OCR Text ... VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC (Note 2) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, w...RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 LIMITED BY PACKA...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 261.30K  /  7 Page

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    NTB13N10 NTB13N10T4G

ON Semiconductor
Part No. NTB13N10 NTB13N10T4G
OCR Text ...te * * * * Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided ...rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not...
Description 100 V, 13 A, N?Channel Enhancement?Mode D2PAK
Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK

File Size 73.91K  /  8 Page

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