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2SK2936 RF151 EL5160IS 2SB1386 CA2830C P2301 UN9117 8805GEDS
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  bonding Datasheet PDF File

For bonding Found Datasheets File :: 7119    Search Time::1.375ms    
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    INA-02100

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HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-02100
OCR Text ...t 400C and either wedge or ball bonding using 0.7 mil gold wire.[1] Chip Outline[1] RF OUT GND 2 Description The INA-02100 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier chip. It is ...
Description Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise Cascadable Silicon Bipolar MMIC Amplifier

File Size 49.46K  /  3 Page

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    LMA110B LMA110

FILTRONIC[Filtronic Compound Semiconductors]
Part No. LMA110B LMA110
OCR Text ...ique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond tool force shall be 35-38 gram. bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended. Ultrasonic bonding is not recommended. 2.)...
Description .5-8GHz MESFET Amplifier

File Size 105.87K  /  4 Page

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    LMA110 LMA110A

FILTRONIC[Filtronic Compound Semiconductors]
Part No. LMA110 LMA110A
OCR Text ...ique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond tool force shall be 35-38 gram. bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended. Ultrasonic bonding is not recommended. 2.)...
Description .5-6 GHz MESFET Amplifier

File Size 80.46K  /  3 Page

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    Vishay Sfernice
Part No. N76K54B
OCR Text ...ride substrate material silicon bonding pads aluminum or gold technical specifications test specifications conditions material ultrafilm absolute tcr 5 ppm/c 10 ppm/c/25 ppm/c 0 to + 70 c - 55 c to + 155 c stability: ? r / r 0.03 % 2000...
Description RMK 55N, RMK 515N Wirebondable High Precision Single Value Thin Film Chip Resistors

File Size 91.22K  /  4 Page

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    HMC-ALH37609

Hittite Microwave Corporation
Part No. HMC-ALH37609
OCR Text ...e at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm micro...
Description GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz

File Size 176.40K  /  6 Page

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    173-7-220P 173-7-1212P 173-7-240A 173-7-240P 173-9-1212P 173-9-210P 173-9-240P 174-9-1212P 174-9-310P 175-6-230P 175-6-4

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Part No. 173-7-220P 173-7-1212P 173-7-240A 173-7-240P 173-9-1212P 173-9-210P 173-9-240P 174-9-1212P 174-9-310P 175-6-230P 175-6-410P 175-6-310P 175-6-320P 175-6-330P 175-6-280P 175-6-240P 175-6-250P 175-6-610P 175-6-210P
OCR Text ...or general cementing; thermally bonding semiconductors and components to chassis or heat sinks, while electrically isolating one from the other; fabricating heat sinks or thermal links; and for all permanent bonding of assemblies which req...
Description THERMAL COMPOUNDS, ADHESIVES AND INTERFACE MATERIALS
   THERMAL COMPOUNDS, ADHESIVES AND INTERFACE MATERIALS

File Size 254.21K  /  5 Page

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    HMC34709

Hittite Microwave Corporation
Part No. HMC34709
OCR Text ...e at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm micro...
Description GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz

File Size 213.57K  /  6 Page

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